Texas instruments incorporated (20240178283). LDMOS DEVICE AND METHOD OF FABRICATION OF SAME simplified abstract
Contents
- 1 LDMOS DEVICE AND METHOD OF FABRICATION OF SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 LDMOS DEVICE AND METHOD OF FABRICATION OF SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
LDMOS DEVICE AND METHOD OF FABRICATION OF SAME
Organization Name
texas instruments incorporated
Inventor(s)
Jingjing Chen of Santa Clara CA (US)
LDMOS DEVICE AND METHOD OF FABRICATION OF SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178283 titled 'LDMOS DEVICE AND METHOD OF FABRICATION OF SAME
Simplified Explanation
The abstract describes an LDMOS device with a semiconductor substrate, an epitaxial layer, a body region, a drain drift region, a drain region, a source region, a gate shield, and a deep trench contact.
- LDMOS device with semiconductor substrate and epitaxial layer
- Body region and drain drift region in the epitaxial layer
- Drain region in the drain drift region and source region in the body region
- Gate shield over gate shield dielectric layer and gate electrode
- Gate shield tied to the source with a variable length
- Body connection via a deep trench contact
Potential Applications
The technology described in the patent application could be applied in the development of high-power RF amplifiers, power management circuits, and other semiconductor devices requiring efficient power handling capabilities.
Problems Solved
This technology addresses the need for improved performance and efficiency in power semiconductor devices, particularly in applications where high power handling and reliability are crucial.
Benefits
The benefits of this technology include enhanced power handling capabilities, improved efficiency, and increased reliability in semiconductor devices. Additionally, the design allows for better control and optimization of device performance.
Potential Commercial Applications
The technology has potential commercial applications in industries such as telecommunications, automotive, aerospace, and power electronics. It could be used in the development of RF power amplifiers, voltage regulators, and other high-power applications.
Possible Prior Art
One possible prior art for this technology could be the development of LDMOS devices with similar structures and features, but with variations in the design and manufacturing processes.
Unanswered Questions
How does this technology compare to existing LDMOS devices on the market?
This article does not provide a direct comparison between the patented technology and existing LDMOS devices in terms of performance, efficiency, or other key metrics.
What are the specific manufacturing processes involved in producing this LDMOS device?
The article does not delve into the detailed manufacturing processes required to produce the LDMOS device described in the patent application.
Original Abstract Submitted
an ldmos device includes a semiconductor substrate with an epitaxial layer that comprises a body region and a drain drift region. a drain region is formed in the drain drift region and a source region is formed in the body region. a gate shield may be formed over a gate shield dielectric layer disposed over a gate electrode, the gate shield having a variable length and tied to the source that is provided with a body connection via a deep trench contact.
