Texas instruments incorporated (20240178065). LASER DICING TO CONTROL SPLASH simplified abstract
Contents
- 1 LASER DICING TO CONTROL SPLASH
LASER DICING TO CONTROL SPLASH
Organization Name
texas instruments incorporated
Inventor(s)
Venkataramanan Kalyanaraman of ALLEN TX (US)
LASER DICING TO CONTROL SPLASH - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178065 titled 'LASER DICING TO CONTROL SPLASH
Simplified Explanation
The abstract describes a method for laser scribing a semiconductor substrate to create a zigzag-shaped crack along a scribe street. This involves using two laser beams to form modified regions and cracks within the substrate.
- Direct a first laser beam at the surface of a semiconductor substrate along a scribe street.
- Focus the first laser beam inside the substrate to form a first modified region.
- The first modified region is offset from a second modified region in a direction orthogonal to the scan direction of the first laser beam.
- Create a first crack extending between the second modified region and the first modified region.
- Direct a second laser beam at the surface to form a third modified region.
- The third modified region is offset from the first and second modified regions.
- Form a second crack extending from the first modified region to the surface.
- The first and second cracks combine to form a zigzag-shaped crack within the substrate along the scribe street.
Potential Applications
This technology could be used in the semiconductor industry for precise scribing of substrates, such as in the manufacturing of solar cells or integrated circuits.
Problems Solved
This method allows for controlled cracking of semiconductor substrates, which is essential for separating individual components without damaging the overall structure.
Benefits
- Precision in scribing substrates - Reduced risk of damage during separation process - Improved efficiency in semiconductor manufacturing
Potential Commercial Applications
"Semiconductor Substrate Laser Scribing Method for Controlled Cracking" could find applications in industries such as solar energy, electronics, and telecommunications.
Possible Prior Art
There may be prior art related to laser scribing methods for semiconductor substrates, but specific examples are not provided in the abstract.
Unanswered Questions
How does this method compare to traditional mechanical scribing techniques in terms of efficiency and precision?
This article does not provide a direct comparison between the proposed laser scribing method and traditional mechanical scribing techniques. Further research or experimentation would be needed to evaluate the efficiency and precision of each approach.
What are the potential limitations or challenges of implementing this technology on an industrial scale?
The abstract does not address the scalability or practicality of using this laser scribing method in large-scale semiconductor manufacturing. Factors such as cost, equipment requirements, and production speed could be important considerations that are not covered in the provided information.
Original Abstract Submitted
one example provides a method that includes directing a first laser beam at a surface of a semiconductor substrate along a scribe street thereof. the first laser beam is focused inside the substrate to form a first modified region, which is offset from a second modified region in a direction orthogonal to a scan direction of the first laser beam, and a first crack extending between the second modified region and the first modified region. a second laser beam is directed at the surface to form a third modified region, which is offset from the first and second modified regions, and a second crack extending from the first modified region to the surface. the first and second cracks form a zigzag-shaped crack within the substrate along the scribe street.
