Texas instruments incorporated (20240113042). SINGLE DIE REINFORCED GALVANIC ISOLATION DEVICE simplified abstract

SINGLE DIE REINFORCED GALVANIC ISOLATION DEVICE

Organization Name

texas instruments incorporated

Inventor(s)

Jeffrey Alan West of Dallas TX (US)

Thomas Dyer Bonifield of Dallas TX (US)

Toshiyuki Tamura of Ushiku-shi (JP)

Yoshihiro Takei of Kashiwa-shi (JP)

SINGLE DIE REINFORCED GALVANIC ISOLATION DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113042 titled 'SINGLE DIE REINFORCED GALVANIC ISOLATION DEVICE

Simplified Explanation

The microelectronic device described in the patent application includes an isolation device with a unique inorganic dielectric plateau structure for improved isolation performance.

• The isolation device consists of a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between them.
• The inorganic dielectric plateau contains an upper etch stop layer and a lower etch stop layer to control the etching process and protect underlying components.
• Alternating layers of high stress and low stress silicon dioxide within the plateau reinforce its structure and enhance performance.

Potential Applications

The technology described in this patent application could be applied in the following areas:

• Semiconductor manufacturing
• Microelectronics industry
• Integrated circuit design

Problems Solved

The innovation addresses the following issues:

• Improved isolation between components
• Enhanced protection of underlying metal bond pads
• Control and feedback during the etching process

Benefits

The benefits of this technology include:

• Enhanced performance and reliability of microelectronic devices
• Improved manufacturing processes
• Increased durability and longevity of components

Potential Commercial Applications

The technology could be utilized in various commercial applications such as:

• Consumer electronics
• Telecommunications equipment
• Automotive electronics

Possible Prior Art

One possible prior art for this technology could be the use of traditional etch stop layers in microelectronic devices for protection and control during the manufacturing process.

How does the inorganic dielectric plateau structure compare to traditional isolation techniques in terms of performance and reliability?

The article does not provide a direct comparison between the inorganic dielectric plateau structure and traditional isolation techniques. Further research or testing may be needed to determine the advantages and limitations of this new approach.

What are the potential challenges or limitations of implementing the inorganic dielectric plateau structure in large-scale production?

The article does not address any potential challenges or limitations that may arise when scaling up the production of microelectronic devices using this technology. Additional studies or pilot projects may be necessary to evaluate the feasibility and cost-effectiveness of mass production.

Original Abstract Submitted

a microelectronic device including an isolation device. the isolation device includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between the lower isolation element and the upper isolation element. the inorganic dielectric plateau contains an upper etch stop layer and a lower etch stop layer between the upper isolation element and the lower isolation element. the upper etch stop layer provides an end point signal during the plateau etch process which provides feedback on the amount of inorganic dielectric plateau which has been etched. the lower etch stop layer provides a traditional etch stop function to provide for a complete plateau etch and protection of an underlying metal bond pad. the inorganic dielectric plateau also contains alternating layers of high stress and low stress silicon dioxide, which provide a means of reinforcement of the inorganic dielectric plateau.