Taiwan semiconductor manufacturing company, ltd. (20250063759). METHOD OF FORMING GATE STRUCTURE

METHOD OF FORMING GATE STRUCTURE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chun-Chieh Wang of Kaohsiung City (TW)

Sheng-Wei Yeh of Taichung City (TW)

Yueh-Ching Pai of Taichung City (TW)

Chi-Jen Yang of New Taipei City (TW)

METHOD OF FORMING GATE STRUCTURE

This abstract first appeared for US patent application 20250063759 titled 'METHOD OF FORMING GATE STRUCTURE

Original Abstract Submitted

provided are a gate structure and a method of forming the same. the gate structure includes a gate dielectric layer, a metal layer, and a cluster layer. the metal layer is disposed over the gate dielectric layer. the cluster layer is sandwiched between the metal layer and the gate dielectric layer, wherein the cluster layer at least includes an amorphous silicon layer, an amorphous carbon layer, or an amorphous germanium layer. in addition, a semiconductor device including the gate structure is provided.