Taiwan semiconductor manufacturing company, ltd. (20250015073). VT1 REDUCTION USING VERTICAL NPN
VT1 REDUCTION USING VERTICAL NPN
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
VT1 REDUCTION USING VERTICAL NPN
This abstract first appeared for US patent application 20250015073 titled 'VT1 REDUCTION USING VERTICAL NPN
Original Abstract Submitted
a semiconductor device that includes an n-buried layer, a p-well region over the n-buried layer, an n-channel mosfet that includes an n-drain region, and a vertical npn bjt having a collector that is the n-drain region and a base that is the p-well region. the p-well region is floating.