Taiwan semiconductor manufacturing company, ltd. (20240413012). Semiconductor Device and Method

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Semiconductor Device and Method

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Tzuan-Horng Liu of Longtan Township (TW)

An-Jhih Su of Taoyuan City (TW)

Mill-Jer Wang of Hsinchu (TW)

Semiconductor Device and Method

This abstract first appeared for US patent application 20240413012 titled 'Semiconductor Device and Method



Original Abstract Submitted

an embodiment is a method including a first dielectric layer over a first substrate, the first dielectric layer having a first metallization pattern therein. the method also includes forming a second dielectric layer over the first dielectric layer and the first metallization pattern. the method also includes forming a sacrificial pad over and extending into the second dielectric layer, the sacrificial pad being electrically coupled to a first conductive feature in the first metallization pattern. the method also includes performing a circuit probe test on the sacrificial pad. the method also includes after performing the circuit probe test, performing an etch process, the etch process removing the sacrificial pad.