Taiwan semiconductor manufacturing company, ltd. (20240413012). Semiconductor Device and Method
Contents
Semiconductor Device and Method
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Tzuan-Horng Liu of Longtan Township (TW)
An-Jhih Su of Taoyuan City (TW)
Semiconductor Device and Method
This abstract first appeared for US patent application 20240413012 titled 'Semiconductor Device and Method
Original Abstract Submitted
an embodiment is a method including a first dielectric layer over a first substrate, the first dielectric layer having a first metallization pattern therein. the method also includes forming a second dielectric layer over the first dielectric layer and the first metallization pattern. the method also includes forming a sacrificial pad over and extending into the second dielectric layer, the sacrificial pad being electrically coupled to a first conductive feature in the first metallization pattern. the method also includes performing a circuit probe test on the sacrificial pad. the method also includes after performing the circuit probe test, performing an etch process, the etch process removing the sacrificial pad.