Taiwan semiconductor manufacturing company, ltd. (20240381609). MEMORY DEVICE simplified abstract

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MEMORY DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jhon-Jhy Liaw of Zhudong Township (TW)

MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240381609 titled 'MEMORY DEVICE

The memory device described in the abstract consists of two SRAM cells and a first metal layer. The first SRAM cell includes first read-port pass-gate and pull-down transistors arranged in a y-direction, as well as second read-port pass-gate and pull-down transistors. The first and second read-port pull-down transistors share a gate structure extending in an x-direction. The second SRAM cell includes third and fourth read-port pass-gate and pull-down transistors arranged in the y-direction, with the third and fourth read-port pull-down transistors sharing a gate structure extending in the x-direction. The first metal layer is positioned over the first and second SRAM cells and includes read bit-line conductors shared by the two cells.

  • Key Features and Innovation:

- Integration of multiple SRAM cells with shared gate structures for improved efficiency. - Utilization of a first metal layer for connecting the SRAM cells and read bit-line conductors. - Arrangement of pass-gate and pull-down transistors in a specific direction for optimized performance.

  • Potential Applications:

- Memory devices in computer systems. - Cache memory in microprocessors. - Embedded memory in electronic devices.

  • Problems Solved:

- Enhanced memory storage and retrieval efficiency. - Improved data processing speed. - Reduction in power consumption.

  • Benefits:

- Faster access times for stored data. - Increased reliability of memory operations. - Lower energy consumption for improved sustainability.

  • Commercial Applications:

- Semiconductor industry for memory chip production. - Computer hardware manufacturers for improved performance. - Consumer electronics companies for enhanced device capabilities.

  • Questions about the technology:

1. How does the shared gate structure in the SRAM cells contribute to overall memory device efficiency? 2. What are the specific advantages of using a first metal layer in connecting the SRAM cells and read bit-line conductors?

  • Frequently Updated Research:

- Ongoing studies on optimizing SRAM cell design for even higher performance. - Research on integrating advanced materials into memory devices for increased storage capacity.


Original Abstract Submitted

a memory device includes a first static random access memory (sram) cell, a second sram cell, and a first metal layer. the first sram cell includes first read-port pass-gate (pg) and pull-down (pd) transistors arranged in a y-direction, and second read-port pg and pd transistors arranged in the y-direction. the first and second read-port pd transistors share a first gate structure extending in an x-direction. the second sram cell includes third read-port pg and pd transistors arranged in the y-direction, and fourth read-port pg and pd transistors arranged in the y-direction. the third and fourth read-port pd transistors share a second gate structure extending in the x-direction. the first metal layer is over the first and second sram cells. the first metal layer includes first and second read bit-line conductors extending in the y-direction and shared by the first and second sram cells.

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