Taiwan semiconductor manufacturing company, ltd. (20240349495). FUSE CELL STRUCTURE simplified abstract

FUSE CELL STRUCTURE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jhon Jhy Liaw of Hsinchu County (TW)

FUSE CELL STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240349495 titled 'FUSE CELL STRUCTURE

The semiconductor structure described in the patent application includes first and second transistors with source, drain, and gate terminals, as well as a program line, metal plates, and insulators forming anti-fuse elements.

• The first anti-fuse element is formed by the first metal plate, first insulator, and second metal plate.
• The second anti-fuse element is formed by the second metal plate, second insulator, and third metal plate.
• The source terminal of the first transistor is connected to the first metal plate, while the source terminal of the second transistor is connected to the third metal plate.
• The program line is connected to the second metal plate.

Potential Applications: - Memory devices - Programmable logic devices - Integrated circuits

Problems Solved: - Providing a structure for anti-fuse elements in a semiconductor device - Enabling programmability and reconfigurability in electronic circuits

Benefits: - Increased flexibility in circuit design - Enhanced functionality in memory and logic applications - Improved reliability and performance

Commercial Applications: Title: Semiconductor Structure for Programmable Circuits This technology can be utilized in the development of programmable memory devices, logic circuits, and other electronic systems. It has the potential to revolutionize the field of semiconductor technology by offering enhanced programmability and reconfigurability.

Questions about the technology: 1. How does the structure of the anti-fuse elements contribute to the programmability of the semiconductor device? 2. What are the advantages of using metal plates and insulators in forming anti-fuse elements in electronic circuits?

Original Abstract Submitted

a semiconductor structure includes first and second transistors each having a source terminal, a drain terminal, and a gate terminal. the semiconductor structure further includes a program line; a first metal plate over the first and the second transistors; a first insulator over the first metal plate; a second metal plate over the first insulator; a second insulator over the second metal plate; and a third metal plate over the second insulator. the first metal plate, the first insulator, and the second metal plate form a first anti-fuse element. the second metal plate, the second insulator, and the third metal plate form a second anti-fuse element. the source terminal of the first transistor is electrically connected to the first metal plate. the source terminal of the second transistor is electrically connected to the third metal plate. the program line is electrically connected to the second metal plate.