Taiwan semiconductor manufacturing company, ltd. (20240347582). BACKSIDE CAPACITOR TECHNIQUES simplified abstract
Contents
BACKSIDE CAPACITOR TECHNIQUES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Min-Feng Kao of Chiayi City (TW)
Dun-Nian Yaung of Taipei City (TW)
Hsing-Chih Lin of Tainan City (TW)
Jen-Cheng Liu of Hsin-Chu City (TW)
BACKSIDE CAPACITOR TECHNIQUES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240347582 titled 'BACKSIDE CAPACITOR TECHNIQUES
The abstract describes a method involving the formation of semiconductor devices on the frontside of a semiconductor substrate, while also creating a trench on the backside of the substrate. Alternating conductive and insulating layers are then formed in the trench to establish a backside capacitor. A backside interconnect structure is subsequently formed to connect to the capacitor electrodes of the backside capacitor.
- Formation of semiconductor devices on the frontside of a semiconductor substrate
- Creation of a trench on the backside of the substrate
- Alternating formation of conductive and insulating layers in the trench to create a backside capacitor
- Formation of a backside interconnect structure to connect to the capacitor electrodes
Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuit production
Problems Solved: - Enhancing semiconductor device performance - Improving capacitance in semiconductor substrates
Benefits: - Increased efficiency in semiconductor manufacturing - Enhanced functionality of semiconductor devices
Commercial Applications: Title: Advanced Semiconductor Device Manufacturing Method This technology could be utilized in the production of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics. The market implications include improved product quality and performance, potentially leading to increased market share for companies implementing this innovation.
Questions about the technology: 1. How does the formation of a backside capacitor improve the performance of semiconductor devices? 2. What are the specific advantages of using alternating conductive and insulating layers in the trench on the backside of the semiconductor substrate?
Original Abstract Submitted
some embodiments relate to a method. in the method, semiconductor devices are formed on a frontside of a semiconductor substrate. a trench is formed in a backside of the semiconductor substrate. conductive and insulating layers are alternatingly formed in the trench on the backside of the semiconductor substrate to establish a backside capacitor. a backside interconnect structure is formed on the backside of the semiconductor substrate to couple to capacitor electrodes of the backside capacitor.
