Taiwan semiconductor manufacturing company, ltd. (20240347489). MEMORY DEVICES simplified abstract
Contents
MEMORY DEVICES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Sai-Hooi Yeong of Hsinchu County (TW)
Yu-Ming Lin of Hsinchu City (TW)
MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240347489 titled 'MEMORY DEVICES
The abstract of the patent application describes a device with stacking structures, conductive contacts, drivers, and dielectric layers. The stacking structures are shaped into staircase structures on different sides, with conductive contacts bonded to conductive lines and drivers.
- Stacking structures with alternating conductive lines and dielectric layers
- Staircase structures on different sides of the device
- Conductive contacts bonded to conductive lines
- Drivers bonded to second conductive contacts
- Components arranged between conductive lines and drivers
Potential Applications: - This technology could be used in electronic devices such as smartphones, tablets, and laptops. - It may also have applications in the automotive industry for advanced driver assistance systems.
Problems Solved: - Improved signal transmission efficiency - Enhanced device performance and reliability
Benefits: - Higher data transfer speeds - Reduced signal interference - Compact design for space-saving in devices
Commercial Applications: Title: Advanced Signal Transmission Device for Electronics This technology could be commercialized by electronics manufacturers to enhance the performance of their devices, leading to improved customer satisfaction and potentially increased sales.
Questions about the technology: 1. How does the arrangement of conductive lines and drivers improve signal transmission efficiency? 2. What are the potential challenges in implementing this technology in mass-produced electronic devices?
Original Abstract Submitted
a device includes stacking structures, first conductive contacts, first drivers and second conductive contacts. each of the stacking structures includes alternately stacked first conductive lines and first dielectric layers, and the stacking structures are shaped into first staircase structures and second staircase structures at first and second sides, respectively. the first conductive contacts are bonded to the first conductive lines respectively. the second conductive contacts are bonded to the first drivers respectively, wherein the first conductive contacts and the second conductive contacts are bonded and disposed between the first conductive lines and the first drivers.
