Taiwan semiconductor manufacturing company, ltd. (20240347388). SEMICONDUCTOR INTEGRATED CIRCUIT simplified abstract
Contents
SEMICONDUCTOR INTEGRATED CIRCUIT
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Kuo-Sheng Chuang of Hsinchu (TW)
SEMICONDUCTOR INTEGRATED CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240347388 titled 'SEMICONDUCTOR INTEGRATED CIRCUIT
The semiconductor device described in the abstract includes a fin structure with a gate structure positioned over a region of the fin structure. The bottom-most surface of the gate structure is offset from the top-most surface of the fin structure beyond the region. Additionally, there is a channel layer between the fin structure and the gate structure, extending above the top-most surface of the fin structure beyond the region.
- The semiconductor device features a fin structure with a gate structure positioned over it.
- The gate structure's bottom-most surface is offset from the fin structure's top-most surface beyond a specific region.
- A channel layer is present between the fin structure and the gate structure, extending above the fin structure's top-most surface beyond the region.
Potential Applications: - This technology could be utilized in the development of advanced semiconductor devices for various electronic applications. - It may find applications in the manufacturing of high-performance integrated circuits and microprocessors.
Problems Solved: - Enhances the performance and efficiency of semiconductor devices. - Allows for precise control and manipulation of electrical signals within the device.
Benefits: - Improved functionality and reliability of semiconductor devices. - Enhanced speed and performance capabilities. - Enables the development of more compact and energy-efficient electronic devices.
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology could have significant commercial applications in the semiconductor industry, particularly in the production of cutting-edge electronic devices. The innovation could lead to the creation of faster, more efficient, and smaller electronic components, catering to the growing demand for high-performance devices in various sectors.
Questions about Semiconductor Device Innovation: 1. How does the offset between the gate structure and the fin structure impact the performance of the semiconductor device? 2. What specific advantages does the channel layer provide in terms of device functionality and efficiency?
Original Abstract Submitted
a semiconductor device includes a fin structure. the semiconductor device further includes a gate structure over a region of the fin structure, wherein a bottom-most surface of the gate structure is offset from a top-most surface of the fin structure beyond the region of the fin structure. the semiconductor device further includes a channel layer between the fin structure and the gate structure, wherein the channel layer extends above the top-most surface of the first fin structure beyond the region of the fin structure.
