Taiwan semiconductor manufacturing company, ltd. (20240341075). SEMICONDUCTOR MEMORY DEVICES WITH IMPROVED PERFORMANCE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICES WITH IMPROVED PERFORMANCE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Peng-Chun Liou of Hsinchu City (TW)
Ya-Yun Cheng of Hsinchu City (TW)
Chia-En Huang of Hsinchu City (TW)
Yi-Ching Liu of Hsinchu City (TW)
Zhiqiang Wu of Hsinchu City (TW)
SEMICONDUCTOR MEMORY DEVICES WITH IMPROVED PERFORMANCE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240341075 titled 'SEMICONDUCTOR MEMORY DEVICES WITH IMPROVED PERFORMANCE
The semiconductor device described in the abstract includes multiple layers and structures that contribute to its functionality.
- The device features a conductive layer, a gate dielectric layer, and a channel layer arranged in a specific configuration.
- Two via-like structures are in direct contact with the channel layer, positioned along the edges of the channel extending in a certain direction.
- These via-like structures are laterally separated along a specific direction, creating a unique layout for the device.
Potential Applications: This semiconductor device could be used in various electronic applications where precise control and manipulation of electrical signals are required.
Problems Solved: This technology addresses the need for efficient and reliable semiconductor devices with specific structural features for enhanced performance.
Benefits: The unique layout and configuration of this semiconductor device can lead to improved functionality, efficiency, and performance in electronic devices.
Commercial Applications: This technology could have significant implications in the semiconductor industry, particularly in the development of advanced electronic devices for various applications.
Questions about the Technology: 1. How does the lateral separation of the via-like structures contribute to the overall performance of the semiconductor device? 2. What specific advantages does the unique configuration of this device offer compared to traditional semiconductor devices?
Original Abstract Submitted
a semiconductor device includes a conductive layer extending along a first lateral direction; a gate dielectric layer disposed over the conductive layer; a channel layer disposed over the gate dielectric layer and extending along a second lateral direction perpendicular to the first lateral direction; a first via-like structure, in direct contact with the channel layer, that is disposed along a first edge of the first channel extending along the second lateral direction; and a second via-like structure, in direct contact with the channel layer, that is disposed along a second, opposite edge of the first channel extending along the second lateral direction. the first via-like structure and second via-like structure are laterally separated apart along a third lateral direction that is clockwise tilted from the second lateral direction with a first positive angle.
