Taiwan semiconductor manufacturing company, ltd. (20240339547). FLASH MEMORY DEVICE AND METHOD THEREOF simplified abstract

FLASH MEMORY DEVICE AND METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jiun-Yun Li of Taipei City (TW)

Nai-Wen Hsu of Pingtung County (TW)

Wei-Chih Hou of Hsinchu City (TW)

Yu-Jui Wu of Taipei City (TW)

Yen Chuang of Kaohsiung City (TW)

Chia-Yu Liu of Taoyuan City (TW)

FLASH MEMORY DEVICE AND METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240339547 titled 'FLASH MEMORY DEVICE AND METHOD THEREOF

The abstract describes a flash memory device with multiple semiconductor layers and regions for efficient data storage and retrieval.

• The device includes a substrate, a semiconductor quantum well layer, a semiconductor spacer, a semiconductor channel layer, a gate structure, and source/drain regions.
• The semiconductor quantum well layer is made of a first semiconductor material and is located over the substrate.
• The semiconductor spacer, made of a second semiconductor material, is positioned over the first semiconductor channel layer.
• The semiconductor channel layer, also made of the first semiconductor material, is placed over the semiconductor spacer.
• The gate structure is located over the second semiconductor channel layer.
• The source/drain regions are situated over the substrate on opposite sides of the gate structure.

Potential Applications: - Data storage devices - Mobile devices - Solid-state drives

Problems Solved: - Enhanced data storage capacity - Improved data retrieval speed

Benefits: - Increased efficiency in data storage and retrieval - Higher performance in electronic devices

Commercial Applications: Title: "Innovative Flash Memory Technology for Enhanced Data Storage" This technology can be utilized in various electronic devices, such as smartphones, tablets, and laptops, to improve data storage capabilities and overall performance.

Questions about the technology: 1. How does the semiconductor quantum well layer contribute to the efficiency of the flash memory device?

  The semiconductor quantum well layer helps in storing and retrieving data quickly and efficiently due to its unique properties.

2. What are the potential market implications of implementing this flash memory technology in consumer electronics?

  By integrating this technology, manufacturers can offer faster and more reliable devices to consumers, leading to increased market competitiveness.

Original Abstract Submitted

a flash memory device includes a substrate, a semiconductor quantum well layer, a semiconductor spacer, a semiconductor channel layer, a gate structure, and source/drain regions. the semiconductor quantum well layer is formed of a first semiconductor material and is disposed over the substrate. the semiconductor spacer is formed of a second semiconductor material and is disposed over the first semiconductor channel layer. the semiconductor channel layer is formed of the first semiconductor material and is disposed over the semiconductor spacer. thea gate structure is over the second semiconductor channel layer. the source/drain regions are over the substrate and are on opposite sides of the gate structure.