Taiwan semiconductor manufacturing company, ltd. (20240339545). GATE-ALL-AROUND STRUCTURE WITH SELF SUBSTRATE ISOLATION AND METHODS OF FORMING THE SAME simplified abstract
Contents
GATE-ALL-AROUND STRUCTURE WITH SELF SUBSTRATE ISOLATION AND METHODS OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Cheng-Ting Chung of Hsinchu City (TW)
Ching-Wei Tsai of Hsinchu City (TW)
Kuan-Lun Cheng of Hsin-Chu (TW)
GATE-ALL-AROUND STRUCTURE WITH SELF SUBSTRATE ISOLATION AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339545 titled 'GATE-ALL-AROUND STRUCTURE WITH SELF SUBSTRATE ISOLATION AND METHODS OF FORMING THE SAME
Simplified Explanation: The patent application discloses a semiconductor device and its manufacturing method. The device includes a fin substrate with different dopant concentrations, an anti-punch through layer, a nanostructure, a gate structure, epitaxial source/drain features, and an isolation layer.
- The semiconductor device comprises a fin substrate with varying dopant concentrations.
- An anti-punch through layer is placed over the fin substrate with a higher dopant concentration.
- A nanostructure, gate structure, and epitaxial source/drain features are integrated into the device.
- The isolation layer, made of the same material as the gate dielectric, is positioned between the anti-punch through layer and the fin substrate.
Key Features and Innovation:
- Integration of an anti-punch through layer with a higher dopant concentration to enhance device performance.
- Use of a nanostructure and gate structure for improved functionality.
- Incorporation of epitaxial source/drain features for efficient device operation.
- Utilization of an isolation layer to prevent interference between components.
Potential Applications: The technology can be applied in the semiconductor industry for the development of advanced electronic devices such as transistors, sensors, and integrated circuits.
Problems Solved: The technology addresses issues related to device performance, efficiency, and interference between components in semiconductor devices.
Benefits:
- Enhanced device performance and functionality.
- Improved efficiency and reliability.
- Reduced interference between components.
Commercial Applications: The technology has potential commercial applications in the semiconductor manufacturing industry, leading to the production of high-performance electronic devices for various applications.
Prior Art: Readers can explore prior art related to semiconductor device manufacturing, anti-punch through layers, nanostructures, and epitaxial source/drain features in the semiconductor industry.
Frequently Updated Research: Stay updated on the latest research in semiconductor device manufacturing, advanced materials, and device integration techniques to enhance the technology's capabilities.
Questions about Semiconductor Device Technology: 1. How does the anti-punch through layer contribute to the performance of the semiconductor device? 2. What are the potential applications of nanostructures in semiconductor devices?
Original Abstract Submitted
semiconductor device and the manufacturing method thereof are disclosed. an exemplary semiconductor device comprises a fin substrate having a first dopant concentration; an anti-punch through (apt) layer disposed over the fin substrate, wherein the apt layer has a second dopant concentration that is greater than the first dopant concentration; a nanostructure including semiconductor layers disposed over the apt layer; a gate structure disposed over the nanostructure and wrapping each of the semiconductor layers, wherein the gate structure includes a gate dielectric and a gate electrode; a first epitaxial source/drain (s/d) feature and a second epitaxial s/d feature disposed over the apt layer, wherein the gate structure is disposed between the first epitaxial s/d feature and the second epitaxial s/d feature; and an isolation layer disposed between the apt layer and the fin substrate, wherein a material of the isolation layer is the same as a material of the gate dielectric.
