Taiwan semiconductor manufacturing company, ltd. (20240339541). SEMICONDUCTOR DEVICE ACTIVE REGION PROFILE AND METHOD OF FORMING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE ACTIVE REGION PROFILE AND METHOD OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Feng-Ching Chu of Hsinchu (TW)
SEMICONDUCTOR DEVICE ACTIVE REGION PROFILE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339541 titled 'SEMICONDUCTOR DEVICE ACTIVE REGION PROFILE AND METHOD OF FORMING THE SAME
The abstract of this patent application describes a semiconductor device and a method for manufacturing it. The method involves receiving a substrate with a semiconductor material stack, patterning the stack to form a trench, and growing a semiconductor layer on the trench sidewall.
- The method involves patterning a semiconductor material stack to form a trench.
- The patterning process includes multiple etch processes with different etchants and durations.
- A third semiconductor layer is epitaxially grown on the trench sidewall.
- The third semiconductor layer is of the same material as the first semiconductor layer in the stack.
- This innovative method allows for precise control and customization of semiconductor structures.
Potential Applications: This technology can be applied in the manufacturing of advanced semiconductor devices such as transistors, diodes, and integrated circuits.
Problems Solved: This method addresses the need for precise and controlled fabrication of semiconductor structures with different materials.
Benefits: The method allows for the creation of complex semiconductor devices with improved performance and efficiency.
Commercial Applications: This technology has significant commercial potential in the semiconductor industry for the production of high-performance electronic devices.
Questions about the technology: 1. How does the use of multiple etch processes with different etchants and durations improve the fabrication process? 2. What are the specific advantages of epitaxially growing a semiconductor layer on the trench sidewall in terms of device performance and reliability?
Original Abstract Submitted
semiconductor device and the manufacturing method thereof are disclosed. an exemplary method of manufacture comprises receiving a substrate including a semiconductor material stack formed thereon, wherein the semiconductor material stack includes a first semiconductor layer of a first semiconductor material and second semiconductor layer of a second semiconductor material that is different than the first semiconductor material. patterning the semiconductor material stack to form a trench. the patterning includes performing a first etch process with a first etchant for a first duration and then performing a second etch process with a second etchant for a second duration, where the second etchant is different from the first etchant and the second duration is greater than the first duration. the first etch process and the second etch process are repeated a number of times. then epitaxially growing a third semiconductor layer of the first semiconductor material on a sidewall of the trench.
