Taiwan semiconductor manufacturing company, ltd. (20240339531). CHANNEL WIDTH MODULATION simplified abstract
Contents
CHANNEL WIDTH MODULATION
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Guan-Lin Chen of Hsinchu City (TW)
Kuo-Cheng Chiang of Hsinchu County (TW)
Shi Ning Ju of Hsinchu City (TW)
Jung-Chien Cheng of Tainan City (TW)
CHANNEL WIDTH MODULATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339531 titled 'CHANNEL WIDTH MODULATION
The semiconductor device described in the abstract includes two base fins extending from a substrate, with an isolation feature between them. Dummy epitaxial layers and insulator layers are also present, along with source/drain features on top.
- The device has a first base fin and a second base fin extending from a substrate.
- An isolation feature is placed between the two base fins.
- Dummy epitaxial layers are present on each base fin.
- Insulator layers cover the dummy epitaxial layers.
- Source/drain features are located on top of the insulator layers.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It can improve the performance and efficiency of electronic devices.
Problems Solved: - Enhances the functionality and reliability of semiconductor devices. - Helps in reducing power consumption and improving overall device performance.
Benefits: - Increased efficiency and performance of electronic devices. - Enhanced reliability and functionality of semiconductor devices.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Improved Performance This technology can be utilized in the production of high-performance electronic devices, leading to better consumer electronics, communication systems, and computing devices. The market implications include improved product competitiveness and increased demand for advanced semiconductor components.
Questions about Semiconductor Device Technology: 1. How does the thickness of the dummy epitaxial layers impact the performance of the semiconductor device?
- The thickness of the dummy epitaxial layers affects the electrical properties and overall efficiency of the device.
2. What are the potential challenges in implementing this technology in mass production?
- Mass production challenges may include cost-effectiveness, scalability, and process optimization.
Original Abstract Submitted
a semiconductor device according to the present disclosure includes a first base fin and a second base fin extending from a substrate, an isolation feature disposed between the first base fin and the second base fin, a first dummy epitaxial layer disposed on the first base fin, a second dummy epitaxial layer disposed on the second base fin, a first insulator layer over the first dummy epitaxial layer, a second insulator layer over the second dummy epitaxial layer, a first source/drain feature disposed on the first insulator layer, a second source/drain feature disposed on the second insulator layer. a thickness of the first dummy epitaxial layer measured from a top surface of the first base fin is smaller than a thickness of the second dummy epitaxial layer measured from a top surface of the second base fin.
