Taiwan semiconductor manufacturing company, ltd. (20240339526). Gate Isolation Feature and Manufacturing Method Thereof simplified abstract

Gate Isolation Feature and Manufacturing Method Thereof

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Kuan-Ting Pan of Hsinchu (TW)

Huan-Chieh Su of Changhua County (TW)

Jia-Chuan You of Taoyuan County (TW)

Shi Ning Ju of Hsinchu City (TW)

Kuo-Cheng Chiang of Hsinchu County (TW)

Yi-Ruei Jhan of Hsinchu (TW)

Li-Yang Chuang of Hsinchu (TW)

Chih-Hao Wang of Hsinchu County (TW)

Gate Isolation Feature and Manufacturing Method Thereof - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240339526 titled 'Gate Isolation Feature and Manufacturing Method Thereof

The semiconductor structure in this patent application consists of fin structures running along one direction, gate structure segments positioned in a line perpendicular to the fin structures, and dummy fin structures separating the gate structure segments. A conductive layer covers both the gate structure segments and the dummy fin structures to connect some of the gate structure segments electrically. Additionally, there is a cut feature aligned with a dummy fin structure to isolate gate structure segments on either side of it.

• The semiconductor structure includes fin structures, gate structure segments, dummy fin structures, a conductive layer, and a cut feature.
• The gate structure segments are positioned orthogonally to the fin structures and separated by dummy fin structures.
• The conductive layer electrically connects some gate structure segments.
• The cut feature isolates gate structure segments on either side of a dummy fin structure.
• This design allows for precise electrical connections and isolations within the semiconductor structure.

Potential Applications: - Advanced semiconductor devices - High-performance electronics - Integrated circuits

Problems Solved: - Improved electrical connectivity in semiconductor structures - Enhanced performance and reliability of electronic devices

Benefits: - Increased efficiency in electronic circuits - Better control over electrical connections - Higher reliability in semiconductor devices

Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology can be utilized in the development of high-performance electronic devices, leading to improved efficiency and reliability in various commercial applications such as smartphones, computers, and automotive electronics.

Questions about the technology: 1. How does the design of the semiconductor structure improve electrical connectivity?

  - The design allows for precise connections between gate structure segments, enhancing overall performance.

2. What are the potential commercial applications of this technology?

  - This technology can be applied in various electronic devices to improve efficiency and reliability.

Original Abstract Submitted

a semiconductor structure includes a plurality of fin structures extending along a first direction, a plurality of gate structure segments positioned along a line extending in a second direction, the second direction being orthogonal to the first direction, wherein the gate structure segments are separated by dummy fin structures. the semiconductor structure further includes a conductive layer disposed over both the gate structure segments and the dummy fin structures to electrically connect at least some of the gate structure segments, and a cut feature aligned with one of the dummy fin structures and positioned to electrically isolate gate structure segments on both sides of the one of the dummy fin structures.