Taiwan semiconductor manufacturing company, ltd. (20240339524). SEMICONDUCTOR CONTACT STRUCTURES AND METHODS simplified abstract

SEMICONDUCTOR CONTACT STRUCTURES AND METHODS

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Huan-Chieh Su of Tianzhong Township (TW)

Cheng-Chi Chuang of New Taipei City (TW)

Chih-Hao Wang of Baoshan Township (TW)

Chun-Yuan Chen of Hsinchu (TW)

Sheng-Tsung Wang of Hsinchu (TW)

Meng-Huan Jao of Taichung City (TW)

SEMICONDUCTOR CONTACT STRUCTURES AND METHODS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240339524 titled 'SEMICONDUCTOR CONTACT STRUCTURES AND METHODS

The method described in the abstract involves several steps in the fabrication of a semiconductor device.

• A fin is formed protruding from a substrate.
• A gate structure is then formed extending over the fin.
• A source/drain region is created in the fin adjacent to the gate structure.
• A first isolation region is formed over the source/drain region.
• A first mask layer is deposited over the gate structure.
• The first isolation region is etched using the first mask layer as an etch mask to create a first recess.
• A second mask layer is conformally deposited over the first mask layer and within the first recess.
• A third mask layer is then deposited over the second mask layer.
• The third mask layer, the second mask layer, and the first isolation region are etched to form a second recess exposing the source/drain region.
• A conductive material is deposited in the second recess.

Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It can improve the performance and efficiency of integrated circuits.

Problems Solved: - Enhances the precision and control in the fabrication process. - Enables the creation of smaller and more powerful semiconductor devices.

Benefits: - Increased functionality and speed of electronic devices. - Cost-effective production of high-performance chips.

Commercial Applications: - This innovation can be applied in the production of smartphones, computers, and other electronic devices. - It has the potential to impact the semiconductor industry by enabling the development of cutting-edge technologies.

Questions about the technology: 1. How does this method improve the performance of semiconductor devices? 2. What are the key advantages of using this fabrication technique in comparison to traditional methods?

Original Abstract Submitted

a method includes forming a fin protruding from a substrate; forming a gate structure extending over the fin; forming a source/drain region in the fin adjacent the gate structure; forming a first isolation region over the source/drain region; forming a first mask layer over the gate structure; etching the first isolation region using the first mask layer as an etch mask to form a first recess; conformally depositing a second mask layer over the first mask layer and within the first recess; depositing a third mask layer over the second mask layer; etching the third mask layer, the second mask layer, and the first isolation region to form a second recess that exposes the source./drain region; and depositing a conductive material in the second recess.