Taiwan semiconductor manufacturing company, ltd. (20240339521). FIN-TYPE FIELD EFFECT TRANSISTOR simplified abstract

FIN-TYPE FIELD EFFECT TRANSISTOR

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chun Hsiung Tsai of Hsinchu County (TW)

Kei-Wei Chen of Tainan City (TW)

FIN-TYPE FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240339521 titled 'FIN-TYPE FIELD EFFECT TRANSISTOR

The abstract describes a fin-type field effect transistor with a substrate, insulators, a gate stack, and spacers. The substrate has fins, insulators are between the fins, and the gate stack is over the fins and insulators. The first spacer is over the gate stack's sidewall, the second spacer is over the first spacer, and both spacers contain carbon. The third spacer is between the first and second spacers.

• Fins on the substrate improve transistor performance.
• Insulators between the fins prevent interference.
• Gate stack controls the flow of current.
• Spacers with carbon enhance transistor efficiency.
• Overall design optimizes transistor functionality.

Potential Applications: - Semiconductor industry for advanced electronics. - Mobile devices for improved performance. - Data centers for enhanced computing power.

Problems Solved: - Increased transistor efficiency. - Better control over current flow. - Enhanced overall performance.

Benefits: - Improved transistor functionality. - Enhanced efficiency and performance. - Potential for smaller, more powerful devices.

Commercial Applications: Title: Advanced Semiconductor Technology for Enhanced Electronics Performance This technology can be used in various commercial applications such as: - Smartphone manufacturing for faster and more efficient devices. - Computer hardware for enhanced processing power. - IoT devices for improved connectivity and performance.

Questions about Fin-Type Field Effect Transistor: 1. How does the inclusion of carbon in the spacers impact transistor performance?

  The carbon in the spacers enhances efficiency and overall functionality of the transistor.

2. What are the potential commercial applications of this fin-type field effect transistor technology?

  This technology can be applied in various industries such as semiconductor, mobile devices, and data centers for improved performance and efficiency.

Original Abstract Submitted

a fin-type field effect transistor including a substrate, insulators, a gate stack, a first spacer, a second spacer, and a third spacer is described. the substrate has fins thereon. the insulators are located over the substrate and between the fins. the gate stack is located over the fins and over the insulators. the first spacer is located over the sidewall of the gate stack. the second spacer is located over the first spacer. the first spacer and the second spacer includes carbon. the third spacer is located between the first spacer and the second spacer.