Taiwan semiconductor manufacturing company, ltd. (20240339513). CONTACT AND VIA STRUCTURES simplified abstract
Contents
CONTACT AND VIA STRUCTURES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Kuo-Chiang Tsai of Hsinchu City (TW)
Jyh-Huei Chen of Hsinchu City (TW)
CONTACT AND VIA STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339513 titled 'CONTACT AND VIA STRUCTURES
The semiconductor device described in the abstract includes a substrate, a first conductive feature, a second conductive feature, and a third conductive feature over the substrate. The first conductive feature has a top surface and a side surface, while the third conductive feature is on the top surface of the first conductive feature and is spaced away from the second conductive feature. The third conductive feature has two sidewalls, one of which has a slope greater than the other.
- The device includes a substrate with multiple conductive features.
- The third conductive feature is positioned on the top surface of the first conductive feature.
- The third conductive feature has two sidewalls with different slopes.
- The second slope of the third conductive feature is greater than the first slope.
- The design allows for precise control and manipulation of electrical properties.
Potential Applications: - This technology could be used in the development of advanced semiconductor devices. - It may find applications in high-speed electronic circuits. - The precise control of electrical properties could be beneficial in sensor technologies.
Problems Solved: - Provides a more efficient way to control electrical properties in semiconductor devices. - Offers a compact design for integrated circuits. - Enhances the performance of electronic devices.
Benefits: - Improved control over electrical properties. - Enhanced performance and efficiency of semiconductor devices. - Potential for smaller and more powerful electronic devices.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology could be utilized in the production of high-performance electronic devices, leading to faster and more efficient products. The market implications include advancements in consumer electronics, telecommunications, and industrial applications.
Prior Art: Readers can explore prior art related to semiconductor device technology, particularly in the field of integrated circuits and electrical property control.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device technology, including research on enhanced electrical property control and integration techniques.
Questions about Semiconductor Device Technology: 1. How does this technology improve the performance of electronic devices? This technology enhances the control and manipulation of electrical properties, leading to more efficient and powerful semiconductor devices.
2. What are the potential applications of this advanced semiconductor device technology? The technology can be applied in various fields such as consumer electronics, telecommunications, and sensor technologies for improved performance and efficiency.
Original Abstract Submitted
an exemplary semiconductor device includes a substrate, a first conductive feature, a second conductive feature, and a third conductive feature over the substrate. the first conductive feature has a first top surface and a side surface. the third conductive feature is on the first top surface of the first conductive feature and is spaced away from the second conductive feature. the third conductive feature has a first sidewall and a second sidewall opposing the first sidewall. the first sidewall extends between the first conductive feature and the second conductive feature. at least a segment of the first sidewall has a first slope. the second sidewall has a second slope. the second slope is greater than the first slope.
