Taiwan semiconductor manufacturing company, ltd. (20240339510). SEMICONDUCTOR DEVICE STRUCTURE WITH BACKSIDE CONTACT simplified abstract
Contents
SEMICONDUCTOR DEVICE STRUCTURE WITH BACKSIDE CONTACT
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Feng-Ching Chu of Pingtung County (TW)
Wei-Yang Lee of Taipei City (TW)
Chia-Pin Lin of Hsinchu County (TW)
SEMICONDUCTOR DEVICE STRUCTURE WITH BACKSIDE CONTACT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339510 titled 'SEMICONDUCTOR DEVICE STRUCTURE WITH BACKSIDE CONTACT
The semiconductor device structure described in the abstract includes a unique configuration of channel structures, epitaxial structures, gate stack, backside conductive contact, and etch stop layer.
- The semiconductor device structure features a stack of channel structures with first and second epitaxial structures on opposite sides.
- A gate stack wraps around the channel structures, providing control over the flow of electrical current.
- A backside conductive contact is connected to the second epitaxial structure, facilitating electrical connections.
- An etch stop layer extends along the sidewall of the backside conductive contact and the bottom of the gate stack, enhancing the structural integrity of the device.
Potential Applications: - This semiconductor device structure could be used in advanced electronic devices such as smartphones, tablets, and computers. - It may find applications in high-speed communication systems, data processing units, and power management devices.
Problems Solved: - Provides improved performance and efficiency in semiconductor devices. - Enhances electrical connectivity and control in electronic systems.
Benefits: - Increased functionality and reliability in electronic devices. - Enhanced performance and energy efficiency. - Improved manufacturing processes for semiconductor devices.
Commercial Applications: Title: Advanced Semiconductor Device Structure for Enhanced Performance This technology could be utilized in the production of high-performance electronic devices, leading to improved consumer electronics, communication systems, and industrial equipment. The market implications include increased demand for efficient and reliable semiconductor components in various industries.
Questions about Semiconductor Device Structure: 1. How does the unique configuration of channel structures and epitaxial structures contribute to the performance of the semiconductor device? 2. What are the potential challenges in implementing this advanced semiconductor device structure in commercial electronic devices?
Frequently Updated Research: Researchers are continually exploring ways to enhance the design and functionality of semiconductor devices. Stay updated on the latest advancements in semiconductor technology to leverage the benefits of this innovative device structure.
Original Abstract Submitted
a semiconductor device structure is provided. the semiconductor device structure includes a stack of channel structures and a first epitaxial structure and a second epitaxial structure adjacent to opposite sides of the channel structures. the semiconductor device structure also includes a gate stack wrapped around the channel structures and a backside conductive contact connected to the second epitaxial structure. the second epitaxial structure is between a top of the backside conductive contact and a top of the gate stack. the semiconductor device structure further includes an etch stop layer extending along a sidewall of the backside conductive contact and a bottom of the gate stack.
