Taiwan semiconductor manufacturing company, ltd. (20240339508). BIPOLAR JUNCTION TRANSISTOR WITH GATE OVER TERMINALS simplified abstract
Contents
BIPOLAR JUNCTION TRANSISTOR WITH GATE OVER TERMINALS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Ming-Shuan Li of Zhudong Township (TW)
Zi-Ang Su of Longtan Township (TW)
Ying-Keung Leung of Hsinchu (TW)
BIPOLAR JUNCTION TRANSISTOR WITH GATE OVER TERMINALS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339508 titled 'BIPOLAR JUNCTION TRANSISTOR WITH GATE OVER TERMINALS
The abstract describes a patent application for a semiconductor device with a unique configuration of fins and gate structures.
- The device includes three sets of fins, each hosting a different component of a bipolar junction transistor (BJT): the emitter, base, and collector.
- Gate structures are positioned over each set of fins, adjacent to the corresponding BJT component, and are physically and electrically separated.
- The innovative design allows for efficient operation and control of the BJT within the semiconductor device.
Potential Applications:
- This technology can be applied in various electronic devices requiring high-performance transistors, such as amplifiers, power supplies, and communication systems.
Problems Solved:
- Provides a more compact and efficient design for bipolar junction transistors, improving overall performance and reliability.
Benefits:
- Enhanced functionality and performance of electronic devices.
- Increased efficiency and reliability of semiconductor components.
- Potential for smaller form factors in electronic devices.
Commercial Applications:
- This technology has significant commercial potential in the semiconductor industry, particularly in the development of high-performance electronic devices.
Questions about the technology: 1. How does the unique configuration of fins and gate structures improve the performance of the bipolar junction transistor? 2. What specific advantages does this semiconductor device offer over traditional transistor designs?
Original Abstract Submitted
embodiments include a first set of fins having an emitter of a bipolar junction transistor (bjt) disposed over the first set of fins, a second set of fins having a base of the bjt disposed over the second set of fins, and a third set of fins having a collector of the bjt disposed over the third set of fins. a first gate structure is disposed over the first set of fins adjacent to the emitter. a second gate structure is disposed over the second set of fins adjacent to the base. a third gate structure is disposed over the third set of fins adjacent to the collector. the first gate structure, second gate structure, and third gate structure are physically and electrically separated.
