Taiwan semiconductor manufacturing company, ltd. (20240339497). Dual Side Contact Structures in Semiconductor Devices simplified abstract

Dual Side Contact Structures in Semiconductor Devices

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Cheng-Wei Chang of Taipei City (TW)

Shuen-Shin Liang of Hsinchu County (TW)

Sung-Li Wang of Zhubei City (TW)

Hsu-Kai Chang of Hsinchu (TW)

Chia-Hung Chu of Taipei City (TW)

Chien-Shun Liao of New Taipei City (TW)

Yi-Ying Liu of Hsinchu City (TW)

Dual Side Contact Structures in Semiconductor Devices - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240339497 titled 'Dual Side Contact Structures in Semiconductor Devices

Simplified Explanation:

This patent application describes a semiconductor device with dual side source/drain contact structures and the methods of making it. The device includes first and second source/drain regions, a nanostructured channel region, a gate structure, and contact structures on the surfaces of the source/drain regions.

• The semiconductor device has dual side source/drain contact structures.
• It includes a nanostructured channel region between the source/drain regions.
• The device features a gate structure surrounding the nanostructured channel region.
• Contact structures are present on the surfaces of the source/drain regions.
• The third contact structure includes a metal silicide layer, a silicide nitride layer, and a conductive layer.

Key Features and Innovation:

• Dual side source/drain contact structures
• Nanostructured channel region
• Gate structure surrounding the channel region
• Contact structures on the surfaces of the source/drain regions
• Third contact structure with metal silicide, silicide nitride, and conductive layers

Potential Applications:

This technology could be used in the development of advanced semiconductor devices for various electronic applications.

Problems Solved:

This technology addresses the need for improved source/drain contact structures in semiconductor devices.

Benefits:

• Enhanced performance of semiconductor devices
• Improved contact structures for better conductivity
• Potential for increased efficiency in electronic applications

Commercial Applications:

Potential commercial applications include the production of high-performance electronic devices for consumer electronics, telecommunications, and computing industries.

Questions about the Technology:

1. How does the nanostructured channel region impact the performance of the semiconductor device? 2. What are the advantages of having dual side source/drain contact structures in this technology?

Frequently Updated Research:

Researchers are continually exploring new materials and fabrication techniques to further enhance the performance of semiconductor devices with dual side source/drain contact structures.

Original Abstract Submitted

a semiconductor device with dual side source/drain (s/d) contact structures and methods of fabricating the same are disclosed. the semiconductor device includes first and second s/d regions, a nanostructured channel region disposed between the first and second s/d regions, a gate structure surrounding the nanostructured channel region, first and second contact structures disposed on first surfaces of the first and second s/d regions, a third contact structure disposed on a second surface of the first s/d region, and an etch stop layer disposed on a second surface of the second s/d region. the third contact structure includes a metal silicide layer, a silicide nitride layer disposed on the metal silicide layer, and a conductive layer disposed on the silicide nitride layer.