Taiwan semiconductor manufacturing company, ltd. (20240339456). INPUT/OUTPUT SEMICONDUCTOR DEVICES simplified abstract
Contents
INPUT/OUTPUT SEMICONDUCTOR DEVICES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Mao-Lin Huang of Hsinchu City (TW)
Lung-Kun Chu of New Taipei City (TW)
Kuo-Cheng Chiang of Hsinchu County (TW)
INPUT/OUTPUT SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339456 titled 'INPUT/OUTPUT SEMICONDUCTOR DEVICES
Simplified Explanation: The semiconductor device described in the patent application consists of two gate-all-around (GAA) transistors, each with multiple channel members, interfacial layers, hafnium-containing dielectric layers, and metal gate electrode layers. The first transistor has thicker interfacial and thinner dielectric layers compared to the second transistor.
- The semiconductor device includes two gate-all-around (GAA) transistors with specific layers and components.
- The first transistor has a greater thickness of the interfacial layer and a smaller thickness of the hafnium-containing dielectric layer compared to the second transistor.
Potential Applications: 1. Advanced semiconductor technology for high-performance computing. 2. Power-efficient devices for mobile electronics. 3. Enhanced memory storage solutions.
Problems Solved: 1. Improved transistor performance and efficiency. 2. Enhanced control over electrical properties. 3. Reduction in power consumption.
Benefits: 1. Increased speed and reliability of semiconductor devices. 2. Lower energy consumption for extended battery life. 3. Potential for smaller and more powerful electronic devices.
Commercial Applications: Advanced Semiconductor Technology for High-Performance Computing
Prior Art: Researchers can explore prior patents related to gate-all-around transistors, hafnium-containing dielectric layers, and semiconductor device structures.
Frequently Updated Research: Ongoing research may focus on optimizing the thickness of interfacial and dielectric layers for further performance improvements.
Questions about Semiconductor Devices: 1. How do gate-all-around transistors differ from traditional transistor designs? 2. What are the key advantages of using hafnium-containing dielectric layers in semiconductor devices?
Original Abstract Submitted
a semiconductor device according to an embodiment includes a first gate-all-around (gaa) transistor and a second gaa transistor. the first gaa transistor includes a first plurality of channel members, a first interfacial layer over the first plurality of channel members, a first hafnium-containing dielectric layer over the first interfacial layer, and a metal gate electrode layer over the first hafnium-containing dielectric layer. the second gaa transistor includes a second plurality of channel members, a second interfacial layer over the second plurality of channel members, a second hafnium-containing dielectric layer over the second interfacial layer, and the metal gate electrode layer over the second hafnium-containing dielectric layer. a first thickness of the first interfacial layer is greater than a second thickness of the second interfacial layer. a third thickness of the first hafnium-containing dielectric layer is smaller than a fourth thickness of the second hafnium-containing dielectric layer.
