Taiwan semiconductor manufacturing company, ltd. (20240339455). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Kuo-Cheng Chiang of Hsinchu (TW)
Kuan-Lun Cheng of Hsinchu (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339455 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
The abstract describes a semiconductor device structure with a unique configuration, including a semiconductor fin with varying widths and surfaces, a gate electrode layer, and source/drain epitaxial features.
- The semiconductor fin has a first portion with a wider width and a second portion with a narrower width, connected by a third surface at an angle ranging from about 90 to 130 degrees.
- A gate electrode layer is positioned over the semiconductor fin, and source/drain epitaxial features are located on opposite sides of the gate electrode layer.
Potential Applications: - This technology could be applied in the semiconductor industry for advanced transistor designs. - It may enhance the performance and efficiency of electronic devices such as computers, smartphones, and other gadgets.
Problems Solved: - Provides a more efficient and compact semiconductor device structure. - Offers improved control and functionality in transistor operations.
Benefits: - Enhanced performance and efficiency in electronic devices. - Potential for smaller and more powerful semiconductor components.
Commercial Applications: - This innovation could have significant implications in the semiconductor market, leading to the development of more advanced and efficient electronic devices.
Questions about the technology: 1. How does the angle between the third surface and the second surface impact the performance of the semiconductor device? 2. What are the specific advantages of having source/drain epitaxial features on opposite sides of the gate electrode layer?
Frequently Updated Research: - Stay informed about the latest advancements in semiconductor technology and transistor design to understand the evolving landscape of this field.
Original Abstract Submitted
a semiconductor device structure, along with methods of forming such, are described. the structure includes a semiconductor fin having a first portion having a first width and a second portion having a second width substantially less than the first width. the first portion has a first surface, the second portion has a second surface, and the first and second surfaces are connected by a third surface. the third surface forms an angle with respect to the second surface, and the angle ranges from about 90 degrees to about 130 degrees. the structure further includes a gate electrode layer disposed over the semiconductor fin and source/drain epitaxial features disposed on the semiconductor fin on opposite sides of the gate electrode layer.
