Taiwan semiconductor manufacturing company, ltd. (20240339449). INTEGRATED CIRCUIT STRUCTURE WITH A REDUCED AMOUNT OF DEFECTS AND METHODS FOR FABRICATING THE SAME simplified abstract
Contents
INTEGRATED CIRCUIT STRUCTURE WITH A REDUCED AMOUNT OF DEFECTS AND METHODS FOR FABRICATING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chih-Chuan Yang of Hsinchu (TW)
Chih-Hsuan Chen of Hsinchu (TW)
INTEGRATED CIRCUIT STRUCTURE WITH A REDUCED AMOUNT OF DEFECTS AND METHODS FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339449 titled 'INTEGRATED CIRCUIT STRUCTURE WITH A REDUCED AMOUNT OF DEFECTS AND METHODS FOR FABRICATING THE SAME
The abstract describes a device with two stacks of channel layers, each extending from a first height to a second height. There are dielectric features on both sides of the first stack, with varying heights, and a gate electrode that extends across the top surface of both stacks.
- The device includes two stacks of channel layers with dielectric features of varying heights.
- A gate electrode extends across the top surface of both stacks.
- The heights of the dielectric features and the gate electrode are arranged in a specific order.
Potential Applications: - This technology could be used in semiconductor devices for improved performance. - It may find applications in the manufacturing of advanced electronic components.
Problems Solved: - Provides a structure for efficient electronic devices. - Offers a way to control the flow of current in semiconductor devices.
Benefits: - Enhanced performance in electronic devices. - Improved control over current flow. - Potential for more advanced and efficient electronic components.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology could be utilized in the production of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics. The market implications include the potential for increased efficiency and functionality in electronic products.
Prior Art: Readers can explore prior research on semiconductor device structures and dielectric features to gain a deeper understanding of the technological advancements in this field.
Frequently Updated Research: Researchers are constantly working on improving semiconductor device structures and dielectric materials to enhance the performance of electronic components. Stay updated on the latest developments in this area for potential future applications.
Questions about Semiconductor Device Technology: 1. How does the arrangement of dielectric features impact the performance of the device?
- The varying heights of the dielectric features play a crucial role in controlling the flow of current and enhancing the efficiency of the device.
2. What are the potential challenges in implementing this technology on a larger scale?
- Scaling up the production of devices with intricate structures may pose challenges in maintaining consistency and quality control.
Original Abstract Submitted
a device includes a first and a second stacks of channel layers each extending from a first height to a second height. a first dielectric feature on a first side of the first stack and between the first and the second stacks extends from a third height to a fourth height. a second dielectric feature on a second side of the first stack opposite to the first side extends from the third height to a fifth height. a gate electrode extends continuously across a top surface of the first and the second stacks and extends to a sixth height. the fifth height is above the sixth height, the sixth height is above the second height, the second height is above the fourth height, the fourth height is above the first height, and the first height is above the third height.
