Taiwan semiconductor manufacturing company, ltd. (20240339406). INTEGRATED CIRCUIT INTERCONNECT STRUCTURES WITH AIR GAPS simplified abstract

INTEGRATED CIRCUIT INTERCONNECT STRUCTURES WITH AIR GAPS

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Tai-I Yang of Hsinchu (TW)

Li-Lin Su of Taichung County (TW)

Yung-Hsu Wu of Taipei City (TW)

Hsin-Ping Chen of Hsinchu County (TW)

Cheng-Chi Chuang of New Taipei City (TW)

INTEGRATED CIRCUIT INTERCONNECT STRUCTURES WITH AIR GAPS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240339406 titled 'INTEGRATED CIRCUIT INTERCONNECT STRUCTURES WITH AIR GAPS

Simplified Explanation

The patent application describes a method for forming an integrated circuit with an interconnect structure by selectively depositing a conductive material on specific features and removing the inter-level dielectric to create a gap between them.

Key Features and Innovation

• Selective deposition of a conductive material on specific features of the interconnect structure.
• Formation of a gap between conductive features by removing the inter-level dielectric.
• Method for integrating circuit components efficiently and precisely.

Potential Applications

This technology can be used in the semiconductor industry for manufacturing advanced integrated circuits with improved interconnect structures.

Problems Solved

• Enhances the performance and reliability of integrated circuits.
• Facilitates the miniaturization of electronic devices.
• Enables the creation of complex circuit designs with high precision.

Benefits

• Improved functionality and efficiency of integrated circuits.
• Enhanced signal transmission and reduced interference.
• Enables the development of smaller and more powerful electronic devices.

Commercial Applications

• Semiconductor manufacturing for consumer electronics, telecommunications, and automotive industries.
• Development of high-performance computing systems and IoT devices.

Prior Art

Readers can explore prior patents related to interconnect structures, semiconductor fabrication, and integrated circuit design to understand the evolution of this technology.

Frequently Updated Research

Researchers are constantly exploring new materials and techniques to further enhance the performance and efficiency of integrated circuits with advanced interconnect structures.

Questions about Integrated Circuits with Interconnect Structure

What are the key advantages of using selective deposition in forming integrated circuits?

Selective deposition allows for precise control over the placement of conductive materials, improving the overall performance and reliability of integrated circuits.

How does the removal of the inter-level dielectric contribute to the formation of a gap between conductive features?

By removing the inter-level dielectric, a gap is created between the conductive features, reducing signal interference and improving the overall functionality of the integrated circuit.

Original Abstract Submitted

examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. in some examples, the method includes receiving a workpiece having an interconnect structure that includes a first conductive feature, a second conductive feature disposed beside the first conductive feature, and an inter-level dielectric disposed between the first conductive feature and the second conductive feature. a conductive material of an etch stop layer is selectively deposited on the first conductive feature and on the second conductive feature without depositing the conductive material on the inter-level dielectric, and the inter-level dielectric is removed to form a gap between the first conductive feature and the second conductive feature.