Taiwan semiconductor manufacturing company, ltd. (20240339362). MULTI-GATE DEVICES WITH IMPROVED PERFORMANCE AND METHODS OF FABRICATING THE SAME simplified abstract

MULTI-GATE DEVICES WITH IMPROVED PERFORMANCE AND METHODS OF FABRICATING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Ko-Cheng Liu of Hsinchu City (TW)

Chang-Miao Liu of Hsinchu City (TW)

Huiling Shang of Hsinchu County (TW)

MULTI-GATE DEVICES WITH IMPROVED PERFORMANCE AND METHODS OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240339362 titled 'MULTI-GATE DEVICES WITH IMPROVED PERFORMANCE AND METHODS OF FABRICATING THE SAME

The semiconductor structure described in the patent application includes a substrate with two mesa structures, an isolation feature between them, a vertical stack of nanostructures, source/drain features, a dielectric layer, and gate structures around the nanostructures.

• The semiconductor structure consists of a substrate with two mesa structures, an isolation feature, a vertical stack of nanostructures, source/drain features, a dielectric layer, and gate structures.
• The first vertical stack of nanostructures is directly over the first mesa structure.
• The dielectric layer has a first portion on the isolation feature and a second portion between the source/drain features and the substrate.
• The first gate structure wraps around each nanostructure of the first vertical stack.

Potential Applications: - This technology could be used in the development of advanced semiconductor devices. - It may find applications in the manufacturing of high-performance electronic components.

Problems Solved: - This technology addresses the need for improved semiconductor structures with enhanced performance and functionality.

Benefits: - The semiconductor structure offers increased efficiency and performance in electronic devices. - It provides a more compact and reliable solution for semiconductor manufacturing processes.

Commercial Applications: - The technology could have significant commercial implications in the semiconductor industry, leading to the development of faster and more efficient electronic devices.

Prior Art: - Researchers interested in this technology may want to explore prior patents related to semiconductor structures, nanostructures, and gate structures.

Frequently Updated Research: - Researchers in the field of semiconductor technology may find relevant and frequently updated research on nanostructure fabrication techniques and advanced gate structures.

Questions about Semiconductor Structures: 1. How does the first gate structure enhance the performance of the semiconductor structure? 2. What are the potential implications of using nanostructures in semiconductor devices?

Original Abstract Submitted

semiconductor structures and methods are provided. in an embodiment, a semiconductor structure includes a substrate including a first mesa structure and a second mesa structure, an isolation feature extending between the first mesa structure and the second mesa structure, a first vertical stack of nanostructures directly over the first mesa structure, first source/drain features coupled to the first vertical stack of nanostructures, a dielectric layer comprising a first portion disposed on the isolation feature and a second portion disposed between the first-type source/drain features and the substrate, and a first gate structure wrapping around each nanostructure of the first vertical stack of nanostructures.