Taiwan semiconductor manufacturing company, ltd. (20240339356). INSULATING CAP ON CONTACT STRUCTURE simplified abstract
Contents
INSULATING CAP ON CONTACT STRUCTURE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Kuo-Chiang Tsai of Hsinchu City (TW)
Fu-Hsiang Su of Zhubei City (TW)
Ke-Jing Yu of Kaohsiung City (TW)
Jyh-Huei Chen of Hsinchu City (TW)
INSULATING CAP ON CONTACT STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339356 titled 'INSULATING CAP ON CONTACT STRUCTURE
Simplified Explanation: The semiconductor device structure described in the patent application includes a gate electrode layer, insulating capping features, source/drain contact structure, and an air gap.
- The semiconductor device structure consists of a gate electrode layer on a substrate.
- A first insulating capping feature is formed over the gate electrode layer.
- A source/drain contact structure is located adjacent to the gate electrode layer.
- A second insulating capping feature is formed over the source/drain contact structure.
- The second insulating capping feature and the first insulating capping feature are made of different materials.
- There is an air gap directly below and in direct contact with the second insulating capping feature.
Potential Applications: 1. Advanced semiconductor devices. 2. High-performance electronics. 3. Integrated circuits.
Problems Solved: 1. Enhancing the performance of semiconductor devices. 2. Improving insulation and contact features. 3. Reducing interference and signal loss.
Benefits: 1. Increased efficiency and speed of electronic devices. 2. Enhanced reliability and durability. 3. Improved overall performance.
Commercial Applications: Title: Advanced Semiconductor Device Structures for Enhanced Performance This technology can be applied in the manufacturing of high-speed processors, memory chips, and communication devices, leading to improved functionality and reliability in various electronic products.
Questions about Semiconductor Device Structures: 1. How does the use of different materials for insulating capping features benefit the semiconductor device structure?
- The use of different materials helps optimize the performance and reliability of the device by providing tailored properties for insulation and protection.
2. What role does the air gap play in the semiconductor device structure?
- The air gap helps reduce interference and signal loss by providing additional insulation and isolation between components.
Original Abstract Submitted
a semiconductor device structure is provided. the semiconductor device structure includes a gate electrode layer formed over a substrate, and a first insulating capping feature formed over the gate electrode layer. the semiconductor device structure includes a source/drain contact structure formed adjacent to the gate electrode layer and a second insulating capping feature formed over the source/drain contact structure. the second insulating capping feature and the first insulating capping feature are made of different materials, and an air gap directly below and in direct contact with the second insulating capping feature.
