Taiwan semiconductor manufacturing company, ltd. (20240339329). GAS PHASE TREATMENT FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract
Contents
- 1 GAS PHASE TREATMENT FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 GAS PHASE TREATMENT FOR MANUFACTURING SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract
- 1.4 Potential Applications
- 1.5 Problems Solved
- 1.6 Benefits
- 1.7 Commercial Applications
- 1.8 Prior Art
- 1.9 Frequently Updated Research
- 1.10 Questions about Semiconductor Structure Manufacturing
- 1.11 Original Abstract Submitted
GAS PHASE TREATMENT FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Yao-Sheng Huang of Hsinchu (TW)
Hsiang-Pi Chang of Hsinchu (TW)
Huang-Lin Chao of Hsinchu (TW)
GAS PHASE TREATMENT FOR MANUFACTURING SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339329 titled 'GAS PHASE TREATMENT FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
The method described in the patent application involves trimming a semiconductor region using a gaseous halogen-based etchant, resulting in a trimmed semiconductor region with a first part and a second part. The second part has a halogen-terminated trimmed surface. The halogen-terminated surface of the second part is then treated with a gaseous oxidant containing hydrogen and oxygen, leading to the oxidation of the second part and the formation of an oxidized part. This process converts the halogen-terminated surface into a hydroxyl group-terminated surface of the oxidized part.
- Trimming of semiconductor region using gaseous halogen-based etchant
- Formation of first and second parts with halogen-terminated surface
- Treatment of halogen-terminated surface with gaseous oxidant containing hydrogen and oxygen
- Oxidation of second part to form an oxidized part
- Conversion of halogen-terminated surface into hydroxyl group-terminated surface
Potential Applications
This technology could be applied in the manufacturing of various semiconductor structures, particularly in the fabrication of advanced electronic devices.
Problems Solved
This method addresses the need for precise trimming and surface treatment of semiconductor regions to improve the performance and reliability of semiconductor devices.
Benefits
- Enhanced precision in semiconductor region trimming - Improved surface properties for better device performance - Increased reliability of semiconductor structures
Commercial Applications
The technology could find commercial applications in the semiconductor industry for the production of high-performance electronic components, such as integrated circuits and sensors.
Prior Art
Readers interested in prior art related to this technology may explore research papers, patents, and industry publications on semiconductor fabrication techniques involving halogen-based etchants and oxidants.
Frequently Updated Research
Researchers in the field of semiconductor manufacturing continue to explore innovative methods for improving the precision and efficiency of semiconductor structure fabrication. Stay updated on the latest advancements in this area for potential future developments.
Questions about Semiconductor Structure Manufacturing
How does the use of gaseous halogen-based etchants impact the precision of semiconductor region trimming?
The use of gaseous halogen-based etchants allows for precise and controlled removal of semiconductor material, enabling accurate trimming of semiconductor regions.
What are the advantages of converting the halogen-terminated surface into a hydroxyl group-terminated surface in semiconductor structure fabrication?
Converting the halogen-terminated surface into a hydroxyl group-terminated surface improves the surface properties of the semiconductor structure, leading to enhanced device performance and reliability.
Original Abstract Submitted
a method for manufacturing a semiconductor structure includes trimming a semiconductor region using a gaseous halogen-based etchant such that the trimmed semiconductor region has a first part and a second part which is formed on the first part and which has a halogen-terminated trimmed surface, and treating the halogen-terminated trimmed surface of the second part using a gaseous oxidant including hydrogen and oxygen such that the second part is oxidized to form an oxidized part, and such that the halogen-terminated trimmed surface is converted into a hydroxyl group-terminated surface of the oxidized part.
