Taiwan semiconductor manufacturing company, ltd. (20240339169). METHOD AND SYSTEM FOR REPLACEMENT OF MEMORY CELLS simplified abstract
Contents
METHOD AND SYSTEM FOR REPLACEMENT OF MEMORY CELLS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hiroki Noguchi of Hsinchu City (TW)
METHOD AND SYSTEM FOR REPLACEMENT OF MEMORY CELLS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339169 titled 'METHOD AND SYSTEM FOR REPLACEMENT OF MEMORY CELLS
The memory system described in the patent application includes an error correction code circuit and a monitor circuit to identify and correct errors in read data.
- The error correction code circuit can correct up to n error bits in each set of read data.
- The monitor circuit tracks multiple fail word addresses associated with m error bits and identifies the first word address to replace corresponding memory locations.
- Each fail word address corresponds to a counter value, with the first word address representing the maximum counter value.
Potential Applications: - Data storage systems - Communication systems - Embedded systems
Problems Solved: - Efficient error correction in memory systems - Improved data reliability - Enhanced system performance
Benefits: - Increased data accuracy - Reduced data corruption - Enhanced system stability
Commercial Applications: Title: Advanced Error Correction Memory System for Enhanced Data Reliability This technology can be used in various industries such as telecommunications, automotive, and aerospace for reliable data storage and communication systems.
Prior Art: Researchers can explore existing patents related to error correction codes and memory systems to understand the evolution of this technology.
Frequently Updated Research: Stay updated on advancements in error correction algorithms and memory system design to enhance the performance of the memory system described in the patent application.
Questions about the Memory System: 1. How does the error correction code circuit improve data reliability in the memory system? 2. What are the potential challenges in implementing this advanced error correction technology in real-world applications?
Original Abstract Submitted
a memory system is provided. the memory system includes an error correction code circuit configured to correct a maximum of n error bits in each of multiple read data and a monitor circuit configured to monitor multiple fail word addresses associated with m error bits, and further configured to output a first word address in the fail word addresses to replace first memory locations corresponding to the first word address. each of the fail word addresses corresponds to one of multiple counter values, and the first word address corresponds to a maximum value of the counter values.
