Taiwan semiconductor manufacturing company, ltd. (20240339156). METHOD FOR PROGRAMMING MEMORY simplified abstract
Contents
METHOD FOR PROGRAMMING MEMORY
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Huai-Ying Huang of Jhonghe City (TW)
METHOD FOR PROGRAMMING MEMORY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339156 titled 'METHOD FOR PROGRAMMING MEMORY
Simplified Explanation: The method described in the abstract involves adjusting the level of a write signal in a memory element over three different periods of time.
- The current level of the write signal is set to a first non-zero value for the first period of time.
- The write signal is provided to the memory element during the first period.
- The level of the write signal is then adjusted to a second non-zero value for the second period of time.
- The write signal continues to be provided to the memory element during the second period.
- Finally, the level of the write signal is adjusted to a third value for the third period of time.
- The write signal is still provided to the memory element during the third period.
Key Features and Innovation:
- Gradual adjustment of the write signal level in a memory element.
- Utilization of different non-zero values for the write signal.
- Provision of the write signal to the memory element over multiple periods of time.
Potential Applications: This method could be applied in various memory systems and data storage devices where precise control of write signals is required.
Problems Solved:
- Ensures accurate and controlled writing of data in memory elements.
- Helps in optimizing the performance and reliability of memory systems.
Benefits:
- Improved data writing accuracy.
- Enhanced performance and reliability of memory systems.
- Efficient utilization of write signals.
Commercial Applications: Potential commercial applications include data storage devices, solid-state drives, and other memory systems where precise write signal control is essential for optimal performance.
Questions about the technology: 1. How does this method compare to traditional write signal control techniques? 2. What impact does the gradual adjustment of the write signal have on the overall performance of memory systems?
Original Abstract Submitted
a method includes setting a current level of a write signal to a first non-zero value for a first period of time. the write signal is provided to a memory element during the first period of time. the current level of the write signal is adjusted from the first non-zero value to a second non-zero value, different from the first non-zero value, for a second period of time. the write signal is provided to the memory element during the second period of time. the current level of the write signal is adjusted from the second non-zero value to a third value, different from the first non-zero value and different from the second non-zero value, for a third period of time. the write signal is provided to the memory element during the third period of time.
