Taiwan semiconductor manufacturing company, ltd. (20240337917). METHODS OF MAKING A SEMICONDUCTOR DEVICE simplified abstract
Contents
METHODS OF MAKING A SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Ching-Huang Chen of Hsinchu (TW)
Hsin-Chang Lee of Hsinchu (TW)
METHODS OF MAKING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240337917 titled 'METHODS OF MAKING A SEMICONDUCTOR DEVICE
The abstract describes a reflective mask with a substrate, a reflective multilayer, a capping layer, and an absorber layer containing alternating pairs of first and second chromium-based layers.
- Reflective mask with innovative absorber layer design
- Absorber layer composed of alternating pairs of chromium-based layers
- Substrate, reflective multilayer, capping layer, and absorber layer work together to enhance reflective properties
- Unique structure improves performance and efficiency of the reflective mask
Potential Applications:
- Semiconductor manufacturing
- Optical coatings
- Thin film technology
Problems Solved:
- Enhances reflective properties
- Improves efficiency in reflective mask applications
Benefits:
- Increased reflectivity
- Enhanced performance in various applications
- Improved efficiency in reflective mask technology
Commercial Applications:
- Semiconductor industry for lithography processes
- Optical industry for coatings and filters
- Thin film technology for reflective surfaces
Questions about Reflective Mask Technology: 1. How does the absorber layer design impact the overall performance of the reflective mask? 2. What are the specific advantages of using chromium-based layers in the absorber layer?
Frequently Updated Research: Ongoing research focuses on optimizing the design and materials used in reflective masks for improved performance and efficiency.
Original Abstract Submitted
a reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. the absorber layer includes one or more alternating pairs of a first cr based layer and a second cr based layer different from the first cr based layer.
