Taiwan semiconductor manufacturing company, ltd. (20240337012). APPARATUS AND METHOD FOR MANUFACTURING METAL GATE STRUCTURES simplified abstract
Contents
APPARATUS AND METHOD FOR MANUFACTURING METAL GATE STRUCTURES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
APPARATUS AND METHOD FOR MANUFACTURING METAL GATE STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240337012 titled 'APPARATUS AND METHOD FOR MANUFACTURING METAL GATE STRUCTURES
Simplified Explanation: This patent application describes semiconductor processing apparatuses and methods that involve a pre-clean chamber receiving a semiconductor wafer from a metal gate layer deposition chamber to remove an oxide layer on the metal gate layer.
- Metal gate layer deposition chambers form metal gate layers on semiconductor wafers.
- Pre-clean chamber removes oxide layers on metal gate layers.
- Apparatus includes multiple metal gate layer deposition chambers and at least one pre-clean chamber.
Key Features and Innovation:
- Semiconductor processing apparatus with pre-clean chamber for oxide layer removal.
- Efficient removal of oxide layers on metal gate layers.
- Multiple metal gate layer deposition chambers for forming metal gate layers on wafers.
Potential Applications: This technology can be used in the semiconductor industry for manufacturing integrated circuits and other electronic devices.
Problems Solved:
- Oxide layer removal on metal gate layers.
- Enhanced semiconductor wafer processing efficiency.
Benefits:
- Improved semiconductor device performance.
- Increased manufacturing yield.
- Enhanced reliability of electronic devices.
Commercial Applications:
- Title: "Advanced Semiconductor Processing Apparatus for Improved Device Performance"
- Potential commercial uses in semiconductor fabrication facilities.
- Market implications include faster production cycles and higher quality electronic components.
Prior Art: Researchers can explore prior patents related to semiconductor processing equipment and methods for oxide layer removal on metal gate layers.
Frequently Updated Research: Ongoing research in semiconductor processing techniques and equipment advancements may impact the development of similar technologies.
Questions about Semiconductor Processing Apparatuses: 1. How does the pre-clean chamber contribute to the overall efficiency of semiconductor wafer processing? 2. What are the potential cost savings associated with using this semiconductor processing apparatus?
Original Abstract Submitted
semiconductor processing apparatuses and methods are provided in which a pre-clean chamber receives a semiconductor wafer from a metal gate layer deposition chamber and at least partially removes an oxide layer on a metal gate layer. in some embodiments, a semiconductor processing apparatus includes a plurality of metal gate layer deposition chambers. each of the metal gate layer deposition chambers is configured to form a metal gate layer on a semiconductor wafer. at least one pre-clean chamber of the apparatus is configured to receive the semiconductor wafer from one of the metal gate layer deposition chamber and at least partially remove an oxide layer on the metal gate layer.
