Taiwan semiconductor manufacturing company, ltd. (20240324478). RRAM BOTTOM ELECTRODE simplified abstract
Contents
RRAM BOTTOM ELECTRODE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Fu-Chen Chang of New Taipei City (TW)
Wen-Ting Chu of Kaohsiung City (TW)
RRAM BOTTOM ELECTRODE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324478 titled 'RRAM BOTTOM ELECTRODE
The patent application describes an integrated circuit device with an RRAM cell that has a top electrode, an RRAM dielectric layer, and a bottom electrode with a surface that interfaces with the RRAM dielectric layer. The bottom electrode surface is free of oxides and has a higher density in a zone adjacent to the surface compared to the bulk region. The surface has a roughness of 2 nm or less, achieved through a specific process involving chemical mechanical polishing, hydrofluoric acid etching, and argon ion bombardment. The resulting array of RRAM cells shows superior performance in terms of resistance states distribution and separation.
- RRAM cell with top and bottom electrodes and RRAM dielectric layer
- Bottom electrode surface free of oxides and higher density near the surface
- Surface roughness of 2 nm or less achieved through specific process steps
- Array of RRAM cells with improved performance in resistance states distribution and separation
- Process involves chemical mechanical polishing, hydrofluoric acid etching, and argon ion bombardment
Potential Applications: - Memory devices - Neuromorphic computing - Artificial intelligence hardware accelerators
Problems Solved: - Improved performance and reliability of RRAM cells - Enhanced resistance states distribution and separation
Benefits: - Higher efficiency in memory storage - Increased reliability in computing applications - Enhanced performance in artificial intelligence hardware
Commercial Applications: Title: Advanced RRAM Technology for Next-Generation Memory Devices This technology can be utilized in the development of high-performance memory devices for various applications such as data storage, computing systems, and artificial intelligence hardware. The improved performance and reliability of RRAM cells can lead to more efficient and powerful electronic devices, driving advancements in technology.
Questions about RRAM Technology: 1. How does the specific process of chemical mechanical polishing, hydrofluoric acid etching, and argon ion bombardment contribute to the improved performance of RRAM cells? 2. What are the potential challenges in scaling up the production of RRAM devices using this technology?
Original Abstract Submitted
an integrated circuit device has an rram cell that includes a top electrode, an rram dielectric layer, and a bottom electrode having a surface that interfaces with the rram dielectric layer. oxides of the bottom electrode are substantially absent from the bottom electrode surface. the bottom electrode has a higher density in a zone adjacent the surface as compared to a bulk region of the bottom electrode. the surface has a roughness ra of 2 nm or less. a process for forming the surface includes chemical mechanical polishing followed by hydrofluoric acid etching followed by argon ion bombardment. an array of rram cells formed by this process is superior in terms of narrow distribution and high separation between low and high resistance states.
