Taiwan semiconductor manufacturing company, ltd. (20240304695). BACKSIDE GATE CONTACT simplified abstract

BACKSIDE GATE CONTACT

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Huan-Chieh Su of Changua County (TW)

Chun-Yuan Chen of HsinChu (TW)

Lo-Heng Chang of Hsinchu (TW)

Li-Zhen Yu of New Taipei City (TW)

Lin-Yu Huang of Hsinchu (TW)

Cheng-Chi Chuang of New Taipei City (TW)

Chih-Hao Wang of Hsinchu County (TW)

BACKSIDE GATE CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240304695 titled 'BACKSIDE GATE CONTACT

The abstract of the patent application describes a semiconductor structure with first nanostructures, a first gate structure wrapping around each nanostructure, and a backside gate contact below the nanostructures.

• The semiconductor structure includes first nanostructures and a first gate structure wrapping around each nanostructure.
• The first gate structure is disposed over an isolation structure.
• A backside gate contact is located below the first nanostructures and adjacent to the isolation structure.
• The bottom surface of the first gate structure is in direct contact with the backside gate contact.

Potential Applications: - This technology could be applied in the development of advanced semiconductor devices. - It may find use in the manufacturing of high-performance electronic components.

Problems Solved: - This innovation addresses the need for improved semiconductor structures with enhanced performance capabilities. - It provides a solution for efficient gate contact placement in semiconductor devices.

Benefits: - Enhanced performance and functionality of semiconductor devices. - Improved reliability and efficiency in electronic components.

Commercial Applications: Title: Advanced Semiconductor Structures for High-Performance Electronics Description: This technology has potential commercial applications in the semiconductor industry for the production of cutting-edge electronic devices with superior performance characteristics.

Questions about the technology: 1. How does the placement of the backside gate contact improve the performance of semiconductor structures? 2. What are the potential implications of this innovation on the semiconductor industry?

Original Abstract Submitted

semiconductor structures and methods of forming the same are provided. a semiconductor structure according to one embodiment includes first nanostructures, a first gate structure wrapping around each of the first nanostructures and disposed over an isolation structure, and a backside gate contact disposed below the first nanostructures and adjacent to the isolation structure. a bottom surface of the first gate structure is in direct contact with the backside gate contact.