Taiwan semiconductor manufacturing company, ltd. (20240297082). SEMICONDUCTOR DEVICES simplified abstract

SEMICONDUCTOR DEVICES

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Shahaji B. More of Hsinchu (TW)

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240297082 titled 'SEMICONDUCTOR DEVICES

The embodiment device described in the abstract includes first and second fins protruding from an isolation region, with fin spacers on the sidewalls of the fins, epitaxial source/drain regions, and varying widths of the epitaxial regions.

• First and second fins protruding from an isolation region
• Fin spacers on the sidewalls of the fins
• Epitaxial source/drain regions on the fin spacers and in the fins
• Varying widths of the epitaxial source/drain regions

Potential Applications: - Semiconductor manufacturing - Integrated circuits - Nanotechnology research

Problems Solved: - Improved performance of semiconductor devices - Enhanced efficiency in integrated circuit design

Benefits: - Higher conductivity - Better control of current flow - Increased speed and reliability of electronic devices

Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology can be used in the production of high-performance electronic devices, leading to faster and more reliable products in various industries such as telecommunications, computing, and consumer electronics.

Questions about the technology: 1. How does the varying width of the epitaxial source/drain regions impact the performance of the semiconductor device?

  - The varying widths allow for better control of current flow, leading to improved conductivity and overall device performance.

2. What are the potential challenges in implementing this technology in mass production?

  - Some challenges may include optimizing the manufacturing process to ensure consistent and reliable results across a large scale.

Original Abstract Submitted

an embodiment device includes: first fins protruding from an isolation region; second fins protruding from the isolation region; a first fin spacer on a first sidewall of one of the first fins, the first fin spacer disposed on the isolation region, the first fin spacer having a first spacer height; a second fin spacer on a second sidewall of one of the second fins, the second fin spacer disposed on the isolation region, the second fin spacer having a second spacer height, the first spacer height greater than the second spacer height; a first epitaxial source/drain region on the first fin spacer and in the first fins, the first epitaxial source/drain region having a first width; and a second epitaxial source/drain region on the second fin spacer and in the second fins, the second epitaxial source/drain region having a second width, the first width greater than the second width.