Taiwan semiconductor manufacturing company, ltd. (20240290887). SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Yu-Lien Huang of Jhubei City (TW)
Ching-Feng Fu of Taichung City (TW)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240290887 titled 'SEMICONDUCTOR DEVICES
The structure in this embodiment includes a gate stack over a channel region of a substrate, a source/drain region adjacent to the channel region, a first inter-layer dielectric (ILD) layer over the source/drain region, a silicide between the first ILD layer and the source/drain region, and a first source/drain contact with a first portion between the silicide and the first ILD layer and a second portion extending through the first ILD layer to contact the silicide.
- Gate stack over channel region
- Source/drain region adjacent to channel region
- First ILD layer over source/drain region
- Silicide between first ILD layer and source/drain region
- First source/drain contact with two portions
Potential Applications: - Semiconductor devices - Integrated circuits - Electronics manufacturing
Problems Solved: - Improved contact resistance - Enhanced device performance - Better reliability
Benefits: - Increased efficiency - Higher device yield - Cost-effective manufacturing
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices, leading to improved functionality and reliability. The market implications include the potential for faster and more efficient devices in various industries such as telecommunications, computing, and consumer electronics.
Prior Art: Readers can explore prior art related to semiconductor device structures, silicide contacts, and inter-layer dielectric materials to gain a deeper understanding of the technological advancements in this field.
Frequently Updated Research: Researchers are constantly working on enhancing semiconductor device structures to improve performance and reliability. Stay updated on the latest developments in silicide contacts and inter-layer dielectric materials for cutting-edge electronic devices.
Questions about Advanced Semiconductor Device Technology: 1. How does this technology impact the overall performance of electronic devices? This technology enhances device performance by improving contact resistance and reliability, leading to more efficient operation.
2. What are the potential cost savings associated with implementing this semiconductor device structure? By improving device yield and efficiency, manufacturers can achieve cost savings in the production of electronic devices.
Original Abstract Submitted
in an embodiment, a structure includes: a gate stack over a channel region of a substrate; a source/drain region adjacent the channel region; a first inter-layer dielectric (ild) layer over the source/drain region; a silicide between the first ild layer and the source/drain region, the silicide contacting a top surface of the source/drain region and a bottom surface of the source/drain region; and a first source/drain contact having a first portion and a second portion, the first portion of the first source/drain contact disposed between the silicide and the first ild layer, the second portion of the first source/drain contact extending through the first ild layer and contacting the silicide.
