Taiwan semiconductor manufacturing company, ltd. (20240290652). SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chia-Chung Chen of Keelung (TW)

Chi-Feng Huang of Hsinchu County (TW)

Victor Chiang Liang of Hsinchu City (TW)

Chung-Hao Chu of Hsinchu (TW)

Ching-Yu Yang of Taichung (TW)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240290652 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the patent application includes a structure with a gate stack, a source/drain epitaxial layer, a lightly doped region, and a silicide region. These components are arranged in a specific configuration to improve the device's performance.

• The device has a first gate stack structure on a substrate.
• It includes a source/drain epitaxial layer adjacent to the gate stack.
• A lightly doped region in the substrate is electrically connected to the epitaxial layer.
• The lightly doped region has a portion protruding from the epitaxial layer's sidewall.
• A silicide region is in contact with the top surface and sidewalls of the epitaxial layer and the lightly doped region.

Key Features and Innovation

• Configuration of gate stack, epitaxial layer, lightly doped region, and silicide region for improved device performance.
• Specific arrangement of components to enhance electrical connections and conductivity.
• Utilization of protruding portion in the lightly doped region for optimized functionality.

Potential Applications

The technology can be applied in various semiconductor devices, such as transistors, integrated circuits, and microprocessors.

Problems Solved

• Enhanced device performance through optimized component arrangement.
• Improved electrical connections and conductivity.
• Increased efficiency and reliability of semiconductor devices.

Benefits

• Higher performance and efficiency in semiconductor devices.
• Enhanced electrical connections and conductivity.
• Improved overall functionality and reliability.

Commercial Applications

Potential Commercial Uses and Market Implications

The technology can be utilized in the production of advanced semiconductor devices for various industries, including electronics, telecommunications, and computing. It can lead to the development of faster and more reliable devices, catering to the growing demand for high-performance electronics.

Questions about the Technology

What are the specific advantages of the protruding portion in the lightly doped region?

The protruding portion in the lightly doped region allows for improved electrical connections and conductivity, enhancing the overall performance of the semiconductor device.

How does the configuration of the gate stack and epitaxial layer contribute to the device's functionality?

The specific arrangement of the gate stack and epitaxial layer helps optimize the electrical connections and conductivity within the device, leading to improved performance and efficiency.

Original Abstract Submitted

a semiconductor device includes a first gate stack structure over a substrate, a source/drain epitaxial layer, a lightly doped region, and a silicide region. the source/drain epitaxial layer is disposed in the substrate and adjacent to the first gate stack structure. the lightly doped region is located in the substrate to be electrically connected to the source/drain epitaxial layer. the lightly doped region includes a first portion protrudes from a sidewall of the source/drain epitaxial layer. the silicide region is in contact with a top surface and sidewalls of a top portion of the source/drain epitaxial layer and a top surface of the first portion of the lightly doped region. the top portion of the source/drain epitaxial layer is higher than the top surface of the first portion of the lightly doped region.