Taiwan semiconductor manufacturing company, ltd. (20240282625). INTERCONNECTION STRUCTURE simplified abstract

INTERCONNECTION STRUCTURE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Po-Kuan Ho of Taipei City (TW)

Chia-Tien Wu of Taichung City (TW)

INTERCONNECTION STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240282625 titled 'INTERCONNECTION STRUCTURE

The method described in the patent application involves the creation of a semiconductor structure with a dielectric layer containing an opening that exposes a metal layer's top surface. A bottom via is selectively deposited in the opening and over the metal layer. A barrier layer is then deposited over the bottom via, in contact with the dielectric layer at the opening's sidewall. A top via is formed in the opening, in contact with the barrier layer, and over the bottom via. The top via is separated from the dielectric layer by the barrier layer.

• Selective deposition of a bottom via in an opening of a dielectric layer
• Deposition of a barrier layer over the bottom via and in contact with the dielectric layer
• Formation of a top via in the opening, in contact with the barrier layer
• Separation of the top via from the dielectric layer by the barrier layer

Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Electronics industry

Problems Solved: - Enhancing the performance and reliability of semiconductor structures - Improving the efficiency of via formation in dielectric layers

Benefits: - Increased functionality of semiconductor devices - Enhanced electrical connectivity - Improved overall performance of electronic systems

Commercial Applications: Title: Advanced Semiconductor Structure for Enhanced Electrical Connectivity This technology could be utilized in the production of high-performance electronic devices, such as smartphones, computers, and other consumer electronics. It could also find applications in the automotive industry for advanced vehicle electronics.

Prior Art: Researchers and engineers in the field of semiconductor manufacturing and integrated circuit design may find relevant prior art in similar patents related to via formation and barrier layer deposition in semiconductor structures.

Frequently Updated Research: Ongoing research in semiconductor materials and manufacturing processes may lead to further advancements in via formation techniques and barrier layer materials, contributing to the continuous improvement of semiconductor structures.

Questions about the technology: 1. How does the barrier layer contribute to the performance of the semiconductor structure? The barrier layer plays a crucial role in preventing unwanted interactions between the top via and the dielectric layer, ensuring the reliability and longevity of the semiconductor device.

2. What are the potential challenges in scaling up this technology for mass production? Scaling up the manufacturing process may require optimization of deposition techniques and materials to maintain consistency and quality across a large number of semiconductor structures.

Original Abstract Submitted

a method includes providing a semiconductor structure including a dielectric layer having an opening exposing a top surface of a metal layer. a bottom via is selectively deposited in the opening and over the metal layer. a barrier layer is deposited over the bottom via and in contact with the dielectric layer at a sidewall of the opening. a top via is formed in the opening, in contact with the barrier layer, and over the bottom via. the top via is separated from the dielectric layer by the barrier layer.