Taiwan semiconductor manufacturing company, ltd. (20240265985). SEMICONDUCTOR MEMORY STRUCTURE simplified abstract
Contents
SEMICONDUCTOR MEMORY STRUCTURE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Wen-Chun Keng of Hsinchu County (TW)
Chang-Ta Yang of Hsinchu City (TW)
SEMICONDUCTOR MEMORY STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240265985 titled 'SEMICONDUCTOR MEMORY STRUCTURE
Simplified Explanation:
This patent application describes a semiconductor memory device with multiple metal lines connected to active regions using conductive vias.
- The memory device includes a first word line over a first active region.
- A first metal line is perpendicular to the first word line and connected to it using a conductive via.
- A second and third metal line are parallel to the first metal line and connected to the source/drain region of the active region using separate conductive vias.
Key Features and Innovation:
- Integration of multiple metal lines connected to active regions using conductive vias.
- Efficient layout design for improved connectivity within the semiconductor memory device.
Potential Applications:
- Semiconductor memory devices in various electronic devices.
- Memory modules for computers and servers.
Problems Solved:
- Improved connectivity and data transfer within the semiconductor memory device.
- Enhanced performance and reliability of the memory device.
Benefits:
- Higher data transfer speeds.
- Increased memory device efficiency.
- Enhanced overall performance of electronic devices.
Commercial Applications:
Potential commercial applications include:
- Memory modules for computers, servers, and other electronic devices.
- Semiconductor memory components for consumer electronics.
Questions about Semiconductor Memory Device:
1. How does the layout design of the metal lines in this semiconductor memory device improve connectivity? 2. What are the specific advantages of using multiple metal lines connected to active regions in a memory device?
Original Abstract Submitted
a semiconductor memory device includes a first word line formed over a first active region. in some embodiments, a first metal line is disposed over and perpendicular to the first word line, where the first metal line is electrically connected to the first word line using a first conductive via, and where the first conductive via is disposed over the first active region. in some examples, the semiconductor memory device further includes a second metal line and a third metal line both parallel to the first metal line and disposed on opposing sides of the first metal line, where the second metal line is electrically connected to a source/drain region of the first active region using a second conductive via, and where the third metal line is electrically connected to the source/drain region of the first active region using a third conductive via.
