Taiwan semiconductor manufacturing company, ltd. (20240258429). MERGED SOURCE/DRAIN FEATURES simplified abstract

MERGED SOURCE/DRAIN FEATURES

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chun-An Lin of Tainan City (TW)

Wei-Yuan Lu of Taipei City (TW)

Feng-Cheng Yang of Hsinchu County (TW)

Tzu-Ching Lin of Hsinchu (TW)

Li-Li Su of HsinChu County (TW)

MERGED SOURCE/DRAIN FEATURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240258429 titled 'MERGED SOURCE/DRAIN FEATURES

The present application describes a method for manufacturing a semiconductor device, involving the formation of various epitaxial features on a fin extending from a substrate.

• Recessing a fin from a substrate
• Forming a base epitaxial feature on the recessed fin
• Forming a bar-like epitaxial feature on the base epitaxial feature
• Forming a conformal epitaxial feature on the bar-like epitaxial feature
• In-situ doping the bar-like epitaxial feature with an n-type dopant at a first doping concentration
• In-situ doping the conformal epitaxial feature with a second doping concentration greater than the first doping concentration

Potential Applications: - Semiconductor manufacturing - Electronics industry - Research and development in semiconductor technology

Problems Solved: - Enhancing the performance of semiconductor devices - Improving the efficiency of doping processes in semiconductor manufacturing

Benefits: - Increased device performance - Enhanced doping efficiency - Potential cost savings in manufacturing processes

Commercial Applications: Title: "Advanced Semiconductor Manufacturing Method for Enhanced Device Performance" This technology could be utilized in the production of high-performance electronic devices, leading to improved market competitiveness and potentially increased revenue for semiconductor manufacturers.

Questions about the technology: 1. How does in-situ doping contribute to the performance of the semiconductor device? - In-situ doping allows for precise control over the doping concentration, which is crucial for optimizing the electrical properties of the device.

2. What are the potential implications of using conformal epitaxial features in semiconductor manufacturing? - Conformal epitaxial features can help improve the overall uniformity and consistency of the device, leading to enhanced performance and reliability.

Original Abstract Submitted

the present application provides a semiconductor device and the method of making the same. the method includes recessing a fin extending from a substrate, forming a base epitaxial feature on the recessed fin, forming a bar-like epitaxial feature on the base epitaxial feature, and forming a conformal epitaxial feature on the bar-like epitaxial feature. the forming of the bar-like epitaxial feature includes in-situ doping the bar-like epitaxial feature with an n-type dopant at a first doping concentration. the forming of the conformal epitaxial feature includes in-situ doping the conformal epitaxial feature with a second doping concentration greater than the first doping concentration.