Taiwan semiconductor manufacturing company, ltd. (20240258237). SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240258237 titled 'SEMICONDUCTOR DEVICES
The abstract describes a device with a first fin, a gate structure, a first source/drain region, an etch stop layer, a conductive line, and a power rail contact connected to the first source/drain region.
- The device includes a first fin and a gate structure.
- A first source/drain region is located adjacent to the gate structure.
- An etch stop layer is positioned over the first source/drain region.
- A conductive line is placed over the etch stop layer, isolated from the first source/drain region.
- The top surface of the conductive line is coplanar with the top surface of the gate structure.
- A power rail contact extends through the first fin and is connected to the first source/drain region.
Potential Applications: - Semiconductor devices - Integrated circuits - Electronics manufacturing
Problems Solved: - Improved connectivity in semiconductor devices - Enhanced performance of integrated circuits
Benefits: - Increased efficiency in electronic devices - Better signal transmission - Enhanced overall device performance
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Connectivity This technology can be utilized in the production of high-performance electronic devices, leading to improved connectivity and overall functionality. The market implications include increased demand for advanced semiconductor components in various industries such as telecommunications, computing, and consumer electronics.
Questions about the technology: 1. How does the coplanar design of the conductive line and gate structure benefit the device's performance? 2. What are the specific advantages of having a power rail contact connected to the first source/drain region in this device design?
Original Abstract Submitted
in an embodiment, a device includes: a first fin; a gate structure over the first fin; a first source/drain region adjacent the gate structure; an etch stop layer over the first source/drain region; a conductive line over the etch stop layer, the conductive line isolated from the first source/drain region by the etch stop layer, a top surface of the conductive line being coplanar with a top surface of the gate structure; and a power rail contact extending through the first fin, the power rail contact connected to the first source/drain region.
