Taiwan semiconductor manufacturing company, ltd. (20240243174). DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE TRANSISTOR PERFORMANCE simplified abstract
Contents
DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE TRANSISTOR PERFORMANCE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Kuei-Ming Chen of New Taipei City (TW)
Chi-Ming Chen of Zhubei City (TW)
DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE TRANSISTOR PERFORMANCE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240243174 titled 'DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE TRANSISTOR PERFORMANCE
The abstract of this patent application describes an integrated chip with a first transistor on a semiconductor substrate, featuring diffusion barrier structures co-doped with different dopants to control doping concentrations.
- The integrated chip includes a first transistor with a first gate structure, a first pair of source/drain regions, and diffusion barrier structures.
- The first pair of source/drain regions contains a first dopant, while the diffusion barrier structures are co-doped with the first dopant and a second dopant.
- The doping concentration of the first dopant in the source/drain regions is higher than in the diffusion barrier structures.
Potential Applications: - Semiconductor manufacturing - Integrated circuit design - Electronics industry
Problems Solved: - Control of doping concentrations in transistors - Enhancing performance and reliability of integrated chips
Benefits: - Improved functionality of transistors - Enhanced efficiency of semiconductor devices - Increased durability of integrated circuits
Commercial Applications: Title: Advanced Semiconductor Technology for Enhanced Integrated Chips This technology can be utilized in the production of high-performance electronic devices, leading to improved consumer electronics, telecommunications equipment, and computing systems.
Questions about the technology: 1. How does the co-doping of diffusion barrier structures with different dopants impact the performance of the integrated chip? 2. What are the potential challenges in implementing this advanced semiconductor technology in mass production?
Frequently Updated Research: Researchers are continually exploring new methods to optimize doping concentrations in transistors for enhanced semiconductor device performance. Stay updated on the latest advancements in semiconductor manufacturing techniques.
Original Abstract Submitted
various embodiments of the present disclosure are directed towards an integrated chip including a first transistor on a semiconductor substrate. the first transistor includes a first gate structure over the semiconductor substrate, a first pair of source/drain regions on opposing sides of the first gate structure, and a pair of diffusion barrier structures between the first pair of source/drain regions and a lower region of the semiconductor substrate. the first pair of source/drain regions comprise a first dopant. the diffusion barrier structures are co-doped with the first dopant and a second dopant different from the first dopant. a doping concentration of the first dopant within the first pair of source/drain regions is greater than a doping concentration of the first dopant within the diffusion barrier structures.
