Taiwan semiconductor manufacturing company, ltd. (20240243008). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hsin-Yi Lee of Hsinchu City (TW)
Cheng-Lung Hung of Hsinchu City (TW)
Da-Yuan Lee of Hsinchu County (TW)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240243008 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes a substrate, a first gate structure, and a second gate structure. The first gate structure is located on the substrate and consists of a first capping layer and a first underlying layer. The second gate structure, also on the substrate, comprises a second capping layer and a second underlying layer. The materials used in the capping layers have higher resistance to oxygen or fluorine compared to the materials in the underlying layers. Additionally, the first capping layer, the second capping layer, and the second underlying layer all contain the same metal element.
- The semiconductor device features a unique gate structure design with capping layers and underlying layers made of materials resistant to oxygen or fluorine.
- The use of the same metal element in the capping layers and underlying layers enhances the device's performance and durability.
- This innovation aims to improve the reliability and longevity of semiconductor devices in various applications.
- By incorporating materials with higher resistance to oxygen or fluorine, the device can operate more efficiently in challenging environments.
- The design of the gate structure offers potential advancements in semiconductor technology, particularly in terms of reliability and performance.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications. - It may find use in industries requiring high-performance and durable semiconductor components, such as telecommunications and automotive.
Problems Solved: - Addresses the issue of reliability and longevity in semiconductor devices by using materials resistant to oxygen or fluorine. - Enhances the performance and durability of semiconductor components in challenging operating conditions.
Benefits: - Improved reliability and longevity of semiconductor devices. - Enhanced performance and efficiency in various applications. - Potential for advancements in semiconductor technology.
Commercial Applications: Title: Advanced Semiconductor Device with Enhanced Gate Structure This technology has the potential for commercial applications in industries requiring high-performance and reliable semiconductor components. It can be utilized in telecommunications, automotive, and other sectors where durable and efficient semiconductor devices are essential.
Questions about the Technology: 1. How does the use of materials resistant to oxygen or fluorine improve the performance of semiconductor devices? 2. What are the specific advantages of incorporating the same metal element in the capping layers and underlying layers of the gate structure?
Original Abstract Submitted
a semiconductor device includes a substrate, a first gate structure, and a second gate structure. the first gate structure is disposed on the substrate. the first gate structure includes a first capping layer and a first underlying layer below the first capping layer. the second gate structure is disposed on the substrate. the second gate structure includes a second capping layer and a second underlying layer below the second capping layer. the material of the first capping layer and the second capping layer have a material having higher resistant to oxygen or fluorine than materials of the first underlying layer and the second underlying layer. the first capping layer, the second capping layer and the second underlying layer include a same metal element.
