Taiwan semiconductor manufacturing company, ltd. (20240234487). DEEP TRENCH CAPACITORS simplified abstract

DEEP TRENCH CAPACITORS

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Wei-Hang Huang of Kaohsiung City (TW)

Chung-Liang Cheng of Hsinchu (TW)

DEEP TRENCH CAPACITORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240234487 titled 'DEEP TRENCH CAPACITORS

The semiconductor structure described in the patent application includes multiple layers and features, such as contact features, etch stop layers, dielectric layers, and a capacitor.

• The structure consists of a bottom electrode layer that extends vertically through several dielectric layers and etch stop layers.
• An insulator layer is placed over the bottom electrode, followed by a top electrode layer.
• This configuration allows for the formation of a capacitor within the semiconductor structure.

Potential Applications: This technology could be used in the manufacturing of advanced semiconductor devices, such as memory chips or processors, where capacitors are essential components.

Problems Solved: The innovation addresses the need for efficient and compact semiconductor structures with integrated capacitors, improving overall device performance.

Benefits: The structure offers enhanced capacitance capabilities in a smaller footprint, leading to more efficient and powerful semiconductor devices.

Commercial Applications: This technology has significant implications for the semiconductor industry, particularly in the development of high-performance electronic devices for various applications.

Prior Art: Researchers interested in this technology may explore prior patents related to semiconductor structures with integrated capacitors to gain a deeper understanding of the field.

Frequently Updated Research: Researchers and industry professionals may find updated studies on semiconductor manufacturing processes and capacitor integration techniques relevant to this technology.

Questions about Semiconductor Structures with Integrated Capacitors: 1. How does the configuration of the bottom electrode layer contribute to the efficiency of the capacitor? 2. What are the potential challenges in scaling up this semiconductor structure for mass production?

Original Abstract Submitted

semiconductor structures and methods of forming the same are provided. a semiconductor structure of the present disclosure includes a contact feature disposed in a first dielectric layer, a first etch stop layer (esl) over the contact feature and the first dielectric layer, a second dielectric layer over the first esl, a second esl over the second dielectric layer, a third dielectric layer over the second esl, a third esl over the third dielectric layer, a fourth dielectric layer over the third esl, and a capacitor. the capacitor includes a bottom electrode layer continuously extending along a top surface of the fourth dielectric layer and vertically through the fourth dielectric layer, the third esl, the third dielectric layer, the second esl, the second dielectric layer, and the first esl, an insulator layer disposed over the bottom electrode, and a top electrode layer disposed over the insulator layer.