Taiwan semiconductor manufacturing company, ltd. (20240234420). SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Yu-Lien Huang of Hsinchu County (TW)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240234420 titled 'SEMICONDUCTOR DEVICE

The abstract of the patent application describes a device with a channel layer, gate structure, source/drain epitaxial structure, and gate via. The gate structure spans the channel layer and consists of a gate dielectric layer and gate electrode. The source/drain epitaxial structure is next to the gate structure and connected to the channel layer. The gate via is located beneath the gate structure and in contact with the gate electrode.

• Simplified Explanation:

- The device has a structure with various components like a channel layer, gate structure, source/drain epitaxial structure, and gate via.

• Key Features and Innovation:

- Device structure includes a gate dielectric layer and gate electrode. - Source/drain epitaxial structure is electrically connected to the channel layer. - Gate via is in contact with the gate electrode.

• Potential Applications:

- Semiconductor industry for electronic devices. - Integrated circuits for various electronic applications.

• Problems Solved:

- Enhances performance and efficiency of electronic devices. - Improves connectivity and functionality of integrated circuits.

• Benefits:

- Increased speed and reliability of electronic devices. - Enhanced overall performance of integrated circuits.

• Commercial Applications:

- Potential use in the semiconductor industry for manufacturing electronic devices. - Market implications include improved products and increased demand for advanced technology.

• Questions about the Technology:

1. How does this device improve the performance of electronic devices? - This device enhances connectivity and efficiency, leading to improved overall performance.

2. What are the potential applications of this technology in the semiconductor industry? - This technology can be used in various electronic applications and integrated circuits, benefiting the semiconductor industry.

Original Abstract Submitted

a device includes a channel layer, a gate structure, a source/drain epitaxial structure, and a gate via. the gate structure is across the channel layer. the gate structure includes a gate dielectric layer and a gate electrode over the gate dielectric layer. the source/drain epitaxial structure is adjacent the gate structure and is electrically connected to the channel layer. the gate via is under the gate structure and is in contact with the gate electrode.