Taiwan semiconductor manufacturing company, ltd. (20240231133). WAVEGUIDE STRUCTURE simplified abstract
Contents
WAVEGUIDE STRUCTURE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chan-Hong Chern of Palo Alto CA (US)
WAVEGUIDE STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240231133 titled 'WAVEGUIDE STRUCTURE
The abstract describes an optical phase-shifting device with a ribbed waveguide portion on an insulating layer, featuring a p-n or p-i-n junction and varying heights of slab and contact portions.
- Ribbed waveguide portion with p-n or p-i-n junction
- Slab portions with higher doping concentrations than the waveguide portion
- Slab heights increasing with distance from the waveguide portion
- Contact portions formed adjacent to slab portions
- Varying heights of contact portions with distance from the waveguide portion
Potential Applications: - Optical communication systems - Photonic integrated circuits - Quantum computing devices
Problems Solved: - Precise phase shifting in optical systems - Enhanced light manipulation in waveguides
Benefits: - Improved optical signal processing - Higher efficiency in optical devices - Enhanced performance in quantum technologies
Commercial Applications: Title: "Advanced Optical Phase-Shifting Device for Next-Generation Communication Systems" This technology can be used in telecommunications, data centers, and research institutions for advanced optical signal processing and quantum computing applications.
Prior Art: Researchers can explore existing patents related to optical phase-shifting devices, waveguide structures, and semiconductor optics to understand the evolution of this technology.
Frequently Updated Research: Researchers are constantly exploring new materials and designs to enhance the performance of optical phase-shifting devices for various applications.
Questions about Optical Phase-Shifting Devices: 1. How does the height variation in the slab and contact portions impact the overall performance of the device? The height variation in the slab and contact portions allows for precise control of light propagation and phase shifting within the waveguide structure, enhancing the device's functionality.
2. What are the key differences between a p-n and p-i-n junction in the context of optical phase-shifting devices? A p-n junction is formed between a p-type and an n-type semiconductor, while a p-i-n junction includes an intrinsic (undoped) region between the p and n layers. The choice of junction type can affect the device's efficiency and performance.
Original Abstract Submitted
an optical phase-shifting device includes a ribbed waveguide portion on an insulating layer, the waveguide portion having a p-n or p-i-n junction extending in a longitudinal direction and having a height. a pair of slab portions are disposed adjacent the waveguide portion, one on each side of the ribbed waveguide portion and on the insulation layer. the slab portion have higher doping concentrations than the respective doping concentrations in the ribbed waveguide portion. at least a portion of each slab portion has a height increasing with distance from the waveguide portion, with the slab height being smaller than that of the waveguide portion at the junction between the waveguide portion and slab portion. a pair of contact portions are formed adjacent the respective slab portion and further away from the waveguide portion. a portion of each contact portion can also have a height varying with distance from the waveguide portion.
