Taiwan semiconductor manufacturing company, ltd. (20240215255). METHOD FOR FABRICATING MEMORY DEVICE simplified abstract
Contents
METHOD FOR FABRICATING MEMORY DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Han-Jong Chia of Hsinchu City (TW)
Yu-Ming Lin of Hsinchu City (TW)
METHOD FOR FABRICATING MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240215255 titled 'METHOD FOR FABRICATING MEMORY DEVICE
The abstract describes a memory device with memory cells embedded in and penetrating through a word line, with source lines and bit lines electrically connected to the memory cells. A method for fabricating the memory device is also provided.
- Memory device with word line, memory cells, source lines, and bit lines
- Memory cells embedded in and penetrating through the word line
- Source lines and bit lines electrically connected to the memory cells
- Fabrication method for the memory device
Potential Applications: - Data storage devices - Computer memory systems - Embedded systems
Problems Solved: - Efficient memory cell integration - Enhanced data storage capabilities
Benefits: - Improved memory device performance - Increased data storage capacity
Commercial Applications: Title: "Advanced Memory Devices for Enhanced Data Storage" This technology can be used in various commercial applications such as: - Consumer electronics - Data centers - Automotive systems
Questions about Memory Devices: 1. How does the memory device's design impact its performance?
- The design of the memory device, with memory cells embedded in the word line, allows for efficient data storage and retrieval, enhancing performance.
2. What are the potential challenges in fabricating such memory devices?
- Fabricating memory devices with embedded memory cells may require precise manufacturing processes to ensure proper functionality.
Original Abstract Submitted
a memory device including a word line, memory cells, source lines and bit lines is provided. the memory cells are embedded in and penetrate through the word line. the source lines and the bit lines are electrically connected the memory cells. a method for fabricating a memory device is also provided.
