Taiwan semiconductor manufacturing company, ltd. (20240215254). MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
Contents
MEMORY DEVICE AND METHOD OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chao-I Wu of Hsinchu County (TW)
Yu-Ming Lin of Hsinchu City (TW)
Sai-Hooi Yeong of Hsinchu County (TW)
Han-Jong Chia of Hsinchu City (TW)
MEMORY DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240215254 titled 'MEMORY DEVICE AND METHOD OF FORMING THE SAME
The memory device described in the patent application consists of two tiers: a first tier on a substrate and a second tier on the first tier. The first tier includes a first layer stack, a first gate electrode, a first channel layer, and a first ferroelectric layer. The second tier includes a second layer stack, a second gate electrode, a second channel layer, and a second ferroelectric layer.
- The memory device features a unique two-tier structure with specific layers and electrodes in each tier.
- The use of ferroelectric layers in both tiers enhances the memory device's performance.
- The first and second gate electrodes penetrate through their respective layer stacks, providing efficient operation.
- The channel layers in both tiers play a crucial role in the device's functionality.
Potential Applications: This memory device could be used in various electronic devices requiring non-volatile memory, such as smartphones, tablets, and IoT devices.
Problems Solved: This technology addresses the need for high-performance, reliable, and efficient memory devices in modern electronics.
Benefits: The memory device offers improved performance, reliability, and efficiency compared to traditional memory technologies.
Commercial Applications: This memory device could be highly sought after by electronics manufacturers looking to enhance the memory capabilities of their products, potentially leading to increased market competitiveness.
Prior Art: Researchers interested in this technology may want to explore prior art related to ferroelectric memory devices and multi-tier memory structures.
Frequently Updated Research: Stay updated on advancements in ferroelectric memory technology, multi-tier memory structures, and semiconductor manufacturing processes for memory devices.
Questions about the Memory Device: 1. How does the use of ferroelectric layers in the memory device impact its performance?
- The ferroelectric layers enhance the device's performance by providing non-volatile memory capabilities and improved efficiency.
2. What sets this two-tier memory device apart from traditional memory technologies?
- The unique two-tier structure with specific layers and electrodes in each tier distinguishes this memory device from traditional technologies.
Original Abstract Submitted
provided are a memory device and a method of forming the same. the memory device includes a first tier on a substrate and a second tier on the first tier. the first tier includes a first layer stack; a first gate electrode penetrating through the first layer stack; a first channel layer between the first layer stack and the first gate electrode; and a first ferroelectric layer between the first channel layer and the first gate electrode. the second tier includes a second layer stack; a second gate electrode penetrating through the second layer stack; a second channel layer between the second layer stack and the second gate electrode; and a second ferroelectric layer between the second channel layer and the second gate electrode.
